Multi-quantum-wells to reveal the band offsets at semiconductor interfaces

W. Pötz, W. Porod, D. K. Ferry

Research output: Contribution to journalArticlepeer-review


The sensitivity of the optical interband transition energies with respect to the band offsets is investigated theoretically for various potential profiles that can be simulated by thin layers of semiconductors. Guided by simple physical arguments we point out which potential profiles are favorable to reveal accurate values for the band offsets. A many-band envelope-function model is used to confirm our predictions quantitatively for GaAs/Ga1-xAlxAs multi-quantum-wells.

Original languageEnglish (US)
Pages (from-to)439-443
Number of pages5
JournalPhysica B+C
Issue number1-3
StatePublished - Nov 1985

ASJC Scopus subject areas

  • General Engineering


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