MOVPE growth of GaN on Si(1 1 1) substrates

Armin Dadgar; M. Poschenrieder; J. Bläsing; O. Contreras; F. Bertram; T. Riemann; A. Reiher; M. Kunze; I. Daumiller; A. Krtschil; A. Diez; A. Kaluza; A. Modlich; M. Kamp; J. Christen; Fernando Ponce; E. Kohn; A. Krost

doi:10.1016/S0022-0248(02)01894-8

MOVPE growth of GaN on Si(1 1 1) substrates

Armin Dadgar
, M. Poschenrieder
, J. Bläsing
, O. Contreras
, F. Bertram
, T. Riemann
, A. Reiher
, M. Kunze
, I. Daumiller
, A. Krtschil
, A. Diez
, A. Kaluza
, A. Modlich
, M. Kamp
, J. Christen
, Fernando Ponce
, E. Kohn
, A. Krost

Physics

Research output: Contribution to journal › Conference article › peer-review

145 Scopus citations

Abstract

Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 10¹⁰ to 10⁹ cm^-2 is observed for LT-AlN interlayers which can be further improved using monolayer thick Si_xN_y in situ masking and subsequent lateral overgrowth. Crack-free AlGaN/GaN transistor structures show high room temperature mobilities of 1590 cm²/Vs at 6.7 × 10¹²cm^-2 sheet carrier concentration. Thick crack-free light emitters have a maximum output power of 0.42 mW at 498 nm and 20 mA.

Original language	English (US)
Pages (from-to)	556-562
Number of pages	7
Journal	Journal of Crystal Growth
Volume	248
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/S0022-0248(02)01894-8
State	Published - Feb 2003
Event	Proceedings of the eleventh international conference on MOVPE XI - Berlin, Germany Duration: Jun 3 2002 → Jun 7 2002

Keywords

A1. Si(1 1 1) substrates
A3. Metalorganic vapor phase epitaxy
B1. GaN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(02)01894-8

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Dadgar, A., Poschenrieder, M., Bläsing, J., Contreras, O., Bertram, F., Riemann, T., Reiher, A., Kunze, M., Daumiller, I., Krtschil, A., Diez, A., Kaluza, A., Modlich, A., Kamp, M., Christen, J., Ponce, F., Kohn, E., & Krost, A. (2003). MOVPE growth of GaN on Si(1 1 1) substrates. Journal of Crystal Growth, 248(SUPPL.), 556-562. https://doi.org/10.1016/S0022-0248(02)01894-8

Dadgar, A, Poschenrieder, M, Bläsing, J, Contreras, O, Bertram, F, Riemann, T, Reiher, A, Kunze, M, Daumiller, I, Krtschil, A, Diez, A, Kaluza, A, Modlich, A, Kamp, M, Christen, J, Ponce, F, Kohn, E & Krost, A 2003, 'MOVPE growth of GaN on Si(1 1 1) substrates', Journal of Crystal Growth, vol. 248, no. SUPPL., pp. 556-562. https://doi.org/10.1016/S0022-0248(02)01894-8

@article{f7c21da34af44b3588cf897ef8b83729,

title = "MOVPE growth of GaN on Si(1 1 1) substrates",

abstract = "Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 1010 to 109 cm-2 is observed for LT-AlN interlayers which can be further improved using monolayer thick SixNy in situ masking and subsequent lateral overgrowth. Crack-free AlGaN/GaN transistor structures show high room temperature mobilities of 1590 cm2/Vs at 6.7 × 1012cm-2 sheet carrier concentration. Thick crack-free light emitters have a maximum output power of 0.42 mW at 498 nm and 20 mA.",

keywords = "A1. Si(1 1 1) substrates, A3. Metalorganic vapor phase epitaxy, B1. GaN",

author = "Armin Dadgar and M. Poschenrieder and J. Bl{\"a}sing and O. Contreras and F. Bertram and T. Riemann and A. Reiher and M. Kunze and I. Daumiller and A. Krtschil and A. Diez and A. Kaluza and A. Modlich and M. Kamp and J. Christen and Fernando Ponce and E. Kohn and A. Krost",

note = "Funding Information: Part of this work is supported by the Deutsche Forschungsgemeinschaft. We acknowledge the fruitful cooperation with D. Bimberg and A. Strittmatter from TU-Berlin. ; Proceedings of the eleventh international conference on MOVPE XI ; Conference date: 03-06-2002 Through 07-06-2002",

year = "2003",

month = feb,

doi = "10.1016/S0022-0248(02)01894-8",

language = "English (US)",

volume = "248",

pages = "556--562",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "SUPPL.",

}

TY - JOUR

T1 - MOVPE growth of GaN on Si(1 1 1) substrates

AU - Dadgar, Armin

AU - Poschenrieder, M.

AU - Bläsing, J.

AU - Contreras, O.

AU - Bertram, F.

AU - Riemann, T.

AU - Reiher, A.

AU - Kunze, M.

AU - Daumiller, I.

AU - Krtschil, A.

AU - Diez, A.

AU - Kaluza, A.

AU - Modlich, A.

AU - Kamp, M.

AU - Christen, J.

AU - Ponce, Fernando

AU - Kohn, E.

AU - Krost, A.

N1 - Funding Information: Part of this work is supported by the Deutsche Forschungsgemeinschaft. We acknowledge the fruitful cooperation with D. Bimberg and A. Strittmatter from TU-Berlin.

PY - 2003/2

Y1 - 2003/2

N2 - Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 1010 to 109 cm-2 is observed for LT-AlN interlayers which can be further improved using monolayer thick SixNy in situ masking and subsequent lateral overgrowth. Crack-free AlGaN/GaN transistor structures show high room temperature mobilities of 1590 cm2/Vs at 6.7 × 1012cm-2 sheet carrier concentration. Thick crack-free light emitters have a maximum output power of 0.42 mW at 498 nm and 20 mA.

AB - Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 1010 to 109 cm-2 is observed for LT-AlN interlayers which can be further improved using monolayer thick SixNy in situ masking and subsequent lateral overgrowth. Crack-free AlGaN/GaN transistor structures show high room temperature mobilities of 1590 cm2/Vs at 6.7 × 1012cm-2 sheet carrier concentration. Thick crack-free light emitters have a maximum output power of 0.42 mW at 498 nm and 20 mA.

KW - A1. Si(1 1 1) substrates

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. GaN

UR - https://www.scopus.com/pages/publications/0037291309

UR - https://www.scopus.com/pages/publications/0037291309#tab=citedBy

U2 - 10.1016/S0022-0248(02)01894-8

DO - 10.1016/S0022-0248(02)01894-8

M3 - Conference article

AN - SCOPUS:0037291309

SN - 0022-0248

VL - 248

SP - 556

EP - 562

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SUPPL.

T2 - Proceedings of the eleventh international conference on MOVPE XI

Y2 - 3 June 2002 through 7 June 2002

ER -

MOVPE growth of GaN on Si(1 1 1) substrates

Abstract

Keywords

ASJC Scopus subject areas

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