Morphology and photoluminescence of Ge islands grown on Si(001)

Michael Goryll, Lili Vescan, Hans Lüth

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


The use of self-organization of nanostructures during growth of materials having a high lattice mismatch e.g. Ge on Si offers new possibilities for device applications. The Ge layers were grown on Si(001) substrates by low pressure chemical vapour deposition. Island size statistics derived from the atomic force micrographs show a trimodal size distribution at high average Ge layer thicknesses, whereas at low Ge layer thicknesses only a narrow monomodal island size distribution exists. Transmission electron micrographs reveal the type of relaxation of the Ge islands and the shape of islands after being capped by a Si overlayer. A correspondence between the broadening of the spectral emission and the island morphology can be concluded from photoluminescence measurements. Multiple stacked island layers exhibit a significant increase of integral intensity in comparison with a single layer of islands, grown under equal conditions. A clear vertical correlation between island positions in different layers and a continuous enlargement of island size in upper layers is found on transmission electron micrographs of stacked island layers.

Original languageEnglish (US)
Pages (from-to)244-247
Number of pages4
JournalThin Solid Films
Issue number1-2
StatePublished - Dec 30 1998
Externally publishedYes


  • Chemical vapour deposition
  • Ge islands
  • Photoluminescence
  • Selforganizing growth
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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