Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures

B. Zorman; S. Krishnan; Dragica Vasileska; J. Xu; M. Van Schilfgaarde

Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures

B. Zorman, S. Krishnan, Dragica Vasileska, J. Xu, M. Van Schilfgaarde

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present an ab-initio band-structure procedure that can be applied for holes in Monte Carlo simulations of transistors with strained alloyed channels.

Original language	English (US)
Title of host publication	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
Editors	M. Laudon, B. Romanowicz
Pages	76-79
Number of pages	4
State	Published - Dec 1 2005
Event	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States Duration: May 8 2005 → May 12 2005

Publication series

Name	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Other

Other	2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
Country/Territory	United States
City	Anaheim, CA
Period	5/8/05 → 5/12/05

Keywords

Ab-Initio
Alloys
Device Simulation
Monte Carlo

ASJC Scopus subject areas

Engineering(all)

Cite this

Zorman, B., Krishnan, S., Vasileska, D., Xu, J., & Van Schilfgaarde, M. (2005). Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures. In M. Laudon, & B. Romanowicz (Eds.), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings (pp. 76-79). (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures. / Zorman, B.; Krishnan, S.; Vasileska, Dragica et al.
2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. ed. / M. Laudon; B. Romanowicz. 2005. p. 76-79 (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zorman, B, Krishnan, S, Vasileska, D, Xu, J & Van Schilfgaarde, M 2005, Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures. in M Laudon & B Romanowicz (eds), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings, pp. 76-79, 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005, Anaheim, CA, United States, 5/8/05.

Zorman B, Krishnan S, Vasileska D, Xu J, Van Schilfgaarde M. Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures. In Laudon M, Romanowicz B, editors, 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. 2005. p. 76-79. (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

Zorman, B. ; Krishnan, S. ; Vasileska, Dragica et al. / Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures. 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings. editor / M. Laudon ; B. Romanowicz. 2005. pp. 76-79 (2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings).

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abstract = "We present an ab-initio band-structure procedure that can be applied for holes in Monte Carlo simulations of transistors with strained alloyed channels.",

keywords = "Ab-Initio, Alloys, Device Simulation, Monte Carlo",

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ER -

Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

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