Monte Carlo particle-based simulation of FIBMOS: Impact of strong quantum confinement on device performance

I. Knezevic; Dragica Vasileska; R. Akis; J. Kang; X. He; D. K. Schroder

doi:10.1016/S0921-4526(01)01427-2

Monte Carlo particle-based simulation of FIBMOS: Impact of strong quantum confinement on device performance

I. Knezevic, Dragica Vasileska, R. Akis, J. Kang, X. He, D. K. Schroder

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A 250 nm focused-ion-beam MOSFET (FIBMOS) has been simulated using a two-dimensional coupled Monte Carlo-Poisson particle-based solver, in which quantum effects have been taken into account by incorporating an effective potential scheme into a classical particle simulator. Inclusion of quantum effects in the analysis of FIBMOS operation is crucial because the high doping density of the p⁺-implant leads to strong quantum confinement of carriers at the implant/oxide interface. We show that the device drive current, threshold voltage and transconductance are indeed extremely sensitive to the proper treatment of quantization.

Original language	English (US)
Pages (from-to)	386-390
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01427-2
State	Published - Mar 2002

Keywords

Device modeling
FIBMOS
Monte Carlo simulation
Quantum effects

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)01427-2

Cite this

@article{604f6697541d4b2ca553abcc945a34e7,

title = "Monte Carlo particle-based simulation of FIBMOS: Impact of strong quantum confinement on device performance",

abstract = "A 250 nm focused-ion-beam MOSFET (FIBMOS) has been simulated using a two-dimensional coupled Monte Carlo-Poisson particle-based solver, in which quantum effects have been taken into account by incorporating an effective potential scheme into a classical particle simulator. Inclusion of quantum effects in the analysis of FIBMOS operation is crucial because the high doping density of the p+-implant leads to strong quantum confinement of carriers at the implant/oxide interface. We show that the device drive current, threshold voltage and transconductance are indeed extremely sensitive to the proper treatment of quantization.",

keywords = "Device modeling, FIBMOS, Monte Carlo simulation, Quantum effects",

author = "I. Knezevic and Dragica Vasileska and R. Akis and J. Kang and X. He and Schroder, {D. K.}",

note = "Funding Information: The authors would like to thank Massimo M. Fischetti and Steven M. Goodnick for valuable discussions during the preparation of this manuscript. The financial support from SRC, the Office of Naval Research under Contract No. N000149910318 and the National Science Foundation under NSF-CAREER ECS-9875051 are also acknowledged. ",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01427-2",

language = "English (US)",

volume = "314",

pages = "386--390",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Monte Carlo particle-based simulation of FIBMOS

T2 - Impact of strong quantum confinement on device performance

AU - Knezevic, I.

AU - Vasileska, Dragica

AU - Akis, R.

AU - Kang, J.

AU - He, X.

AU - Schroder, D. K.

N1 - Funding Information: The authors would like to thank Massimo M. Fischetti and Steven M. Goodnick for valuable discussions during the preparation of this manuscript. The financial support from SRC, the Office of Naval Research under Contract No. N000149910318 and the National Science Foundation under NSF-CAREER ECS-9875051 are also acknowledged.

PY - 2002/3

Y1 - 2002/3

N2 - A 250 nm focused-ion-beam MOSFET (FIBMOS) has been simulated using a two-dimensional coupled Monte Carlo-Poisson particle-based solver, in which quantum effects have been taken into account by incorporating an effective potential scheme into a classical particle simulator. Inclusion of quantum effects in the analysis of FIBMOS operation is crucial because the high doping density of the p+-implant leads to strong quantum confinement of carriers at the implant/oxide interface. We show that the device drive current, threshold voltage and transconductance are indeed extremely sensitive to the proper treatment of quantization.

AB - A 250 nm focused-ion-beam MOSFET (FIBMOS) has been simulated using a two-dimensional coupled Monte Carlo-Poisson particle-based solver, in which quantum effects have been taken into account by incorporating an effective potential scheme into a classical particle simulator. Inclusion of quantum effects in the analysis of FIBMOS operation is crucial because the high doping density of the p+-implant leads to strong quantum confinement of carriers at the implant/oxide interface. We show that the device drive current, threshold voltage and transconductance are indeed extremely sensitive to the proper treatment of quantization.

KW - Device modeling

KW - FIBMOS

KW - Monte Carlo simulation

KW - Quantum effects

UR - http://www.scopus.com/inward/record.url?scp=0036504450&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036504450&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)01427-2

DO - 10.1016/S0921-4526(01)01427-2

M3 - Article

AN - SCOPUS:0036504450

SN - 0921-4526

VL - 314

SP - 386

EP - 390

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Monte Carlo particle-based simulation of FIBMOS: Impact of strong quantum confinement on device performance

Abstract

Keywords

ASJC Scopus subject areas

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