Monte carlo device simulations

The semiconductor device-based electronics industry has been the largest industry in the world with global sales of over a trillion dollars since 1998. The revolution in the semiconductor industry, a large portion of the electronics industry, began in 1947 with the fabrication of bipolar devices on slabs of polycrystalline germanium (Ge). Single-crystalline materials were later proposed and introduced that made possible the fabrication of grown junction transistors. Migration to silicon (Si)-based devices was initially hindered by the stability of the Si/SiO₂ materials system, necessitating a new generation of crystal pullers with improved environmental controls to prevent SiO₂ formation. Later, the stability and low interface-state density of the Si/SiO₂ materials system provided passivation of junctions and eventually, the migration from bipolar devices to field-effect devices in 1960. By 1968, both complementary metal-oxide-semiconductor (CMOS) devices and poly-Si gate technology that allowed self-alignment of the gate to the source/drain of the device had been developed. These innovations permitted a significant reduction in power dissipation and a reduction of the overlap capacitance, improving frequency performance and resulting in the essential components of the modern CMOS device.