@article{673b297fabe6483db3e1eb9b5bd969ed,
title = "Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer",
abstract = "A new method to monolithically integrate a GaAs MESFET and a resonant cavity LED is demonstrated. Current confinement in these two dissimilar devices is accomplished using a buried insulating layer formed by the thermal oxidation of AlAs. Fabrication and device performance under dc bias as well as modulation results are briefly described.",
keywords = "Integrated optoelectronics, Light-emitting diodes",
author = "Chuck Wheeler and Sonu Daryanani and Mathine, {David L.} and Maracas, {George N.} and David Allee",
note = "Funding Information: Manuscript received June 3, 1996; revised October 11, 1996. This work was supported by DARPA/ARO Grant DAAH04-93-024. C. Wheeler, D. L. Mathine, and D. R. Allee are with the Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706 USA. S. Daryanani is with Varian Ion Implant Systems, Gloucester, MA 01930 USA. G. N. Maracas is with Motorola PCRL, Tempe, AZ 85284 USA. Publisher Item Identifier S 1041-1135(97)01237-8. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",
year = "1997",
month = feb,
doi = "10.1109/68.553089",
language = "English (US)",
volume = "9",
pages = "194--196",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}