A new method to monolithically integrate a GaAs MESFET and a resonant cavity LED is demonstrated. Current confinement in these two dissimilar devices is accomplished using a buried insulating layer formed by the thermal oxidation of AlAs. Fabrication and device performance under dc bias as well as modulation results are briefly described.
- Integrated optoelectronics
- Light-emitting diodes
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering