Molecular-scale tailoring of graphene surface chemistry via organic functionalization

Q. H. Wang; Md Z. Hossain; M. A. Walsh; M. C. Hersam

doi:10.1149/1.3569912

Molecular-scale tailoring of graphene surface chemistry via organic functionalization

Q. H. Wang, Md Z. Hossain, M. A. Walsh, M. C. Hersam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Pages	201-203
Number of pages	3
Edition	3
DOIs	https://doi.org/10.1149/1.3569912
State	Published - 2011
Externally published	Yes
Event	Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting - Montreal, QC, Canada Duration: May 2 2011 → May 4 2011

Publication series

Name	ECS Transactions
Number	3
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting
Country/Territory	Canada
City	Montreal, QC
Period	5/2/11 → 5/4/11

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3569912

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Molecular-scale tailoring of graphene surface chemistry via organic functionalization. / Wang, Q. H.; Hossain, Md Z.; Walsh, M. A. et al.
Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3. ed. 2011. p. 201-203 (ECS Transactions; Vol. 35, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, QH, Hossain, MZ, Walsh, MA & Hersam, MC 2011, Molecular-scale tailoring of graphene surface chemistry via organic functionalization. in Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3 edn, ECS Transactions, no. 3, vol. 35, pp. 201-203, Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting, Montreal, QC, Canada, 5/2/11. https://doi.org/10.1149/1.3569912

@inproceedings{7bdeb67546294ad2b5d8537f2dd93dda,

title = "Molecular-scale tailoring of graphene surface chemistry via organic functionalization",

author = "Wang, {Q. H.} and Hossain, {Md Z.} and Walsh, {M. A.} and Hersam, {M. C.}",

year = "2011",

doi = "10.1149/1.3569912",

language = "English (US)",

isbn = "9781566778640",

series = "ECS Transactions",

number = "3",

pages = "201--203",

booktitle = "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3",

edition = "3",

note = "Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting ; Conference date: 02-05-2011 Through 04-05-2011",

}

TY - GEN

T1 - Molecular-scale tailoring of graphene surface chemistry via organic functionalization

AU - Wang, Q. H.

AU - Hossain, Md Z.

AU - Walsh, M. A.

AU - Hersam, M. C.

PY - 2011

Y1 - 2011

UR - http://www.scopus.com/inward/record.url?scp=79960755490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960755490&partnerID=8YFLogxK

U2 - 10.1149/1.3569912

DO - 10.1149/1.3569912

M3 - Conference contribution

AN - SCOPUS:79960755490

SN - 9781566778640

T3 - ECS Transactions

SP - 201

EP - 203

BT - Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

T2 - Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting

Y2 - 2 May 2011 through 4 May 2011

ER -

Molecular-scale tailoring of graphene surface chemistry via organic functionalization

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ASJC Scopus subject areas

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