@inproceedings{834c31aea6404920adb8a4a0d9212599,
title = "Modeling the non-uniform distribution of interface traps",
abstract = "The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψ s) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot) and the interface trap (N it) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s. The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.",
keywords = "Total ionizing dose (TID), compact model, interface traps, metal-oxide-semiconductor (MOS), surface potential",
author = "Esqueda, {Ivan S.} and Hugh Barnaby",
year = "2011",
month = dec,
day = "1",
doi = "10.1109/RADECS.2011.6131293",
language = "English (US)",
isbn = "9781457705878",
series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
pages = "15--19",
booktitle = "RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings",
note = "12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 ; Conference date: 19-09-2011 Through 23-09-2011",
}