Modeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (Fets)

Ivan S. Esqueda, Cory D. Cress, Travis J. Anderson, Jonathan R. Ahlbin, Michael Bajura, Michael Fritze, Jeong S. Moon

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


This paper investigates total ionizing dose (TID) effects in top-gated epitaxial graphene field-effect-transistors (GFETs). Measurements reveal voltage shifts in the current-voltage (I-V) characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxide-trapped charges. A semi-empirical approach for modeling radiation-induced degradation in GFETs effective carrier mobility is described in the paper. The modeling approach describes Coulomb and short-range scattering based on calculations of charge and effective vertical field that incorporate radiation-induced oxide trapped charges. The transition from the dominant scattering mechanism is correctly described as a function of effective field and oxide trapped charge density. Comparison with experimental data results in good qualitative agreement when including an empirical component to account for scatterer transparency in the low field regime.

Original languageEnglish (US)
Pages (from-to)234-245
Number of pages12
JournalElectronics (Switzerland)
Issue number3
StatePublished - Jul 24 2013
Externally publishedYes


  • Conductivity
  • Field-effect-transistors (FETs)
  • Graphene
  • Mobility
  • Radiation
  • Total ionizing dose (TID)

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Signal Processing
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering


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