Modeling Quantum Confinement in Multi-Gate Transistors with Effective Potential

Caroline S. Soares, Pranay K.R. Baikadi, Alan C.J. Rossetto, Marcelo A. Pavanello, Dragica Vasileska, Gilson I. Wirth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Particle-based Monte Carlo device simulators are an efficient tool to investigate the performance and reliability of transistors. The semiclassical theoretical model employed in the Monte Carlo device simulator is unsuccessful to describe some aspects of the multi-gate transistors that come from the quantum behavior of charge carriers. To take into consideration the space-quantization effects in these simulators, a quantum correction is necessary. We propose to include an effective potential in the Monte Carlo device simulator to address the wave-like behavior of electrons in n-type silicon FinFET and n-type silicon nanowire transistors. The effective potential has a unique parameter, which can be adjusted to find a line density using an Effective Potential-Poisson solver that matches with the line density calculated using a Schrodinger-Poisson solver. We demonstrated that using the effective potential model, the effect of the electron confinement is well described.

Original languageEnglish (US)
Title of host publication36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665487146
DOIs
StatePublished - 2022
Event36th Symposium on Microelectronics Technology, SBMICRO 2022 - Virtual, Porto Alegre, Brazil
Duration: Aug 22 2022Aug 26 2022

Publication series

Name36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings

Conference

Conference36th Symposium on Microelectronics Technology, SBMICRO 2022
Country/TerritoryBrazil
CityVirtual, Porto Alegre
Period8/22/228/26/22

Keywords

  • FinFET
  • effective potential
  • nanowire transistors
  • quantum confinement

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation

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