TY - GEN
T1 - Modeling Quantum Confinement in Multi-Gate Transistors with Effective Potential
AU - Soares, Caroline S.
AU - Baikadi, Pranay K.R.
AU - Rossetto, Alan C.J.
AU - Pavanello, Marcelo A.
AU - Vasileska, Dragica
AU - Wirth, Gilson I.
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Particle-based Monte Carlo device simulators are an efficient tool to investigate the performance and reliability of transistors. The semiclassical theoretical model employed in the Monte Carlo device simulator is unsuccessful to describe some aspects of the multi-gate transistors that come from the quantum behavior of charge carriers. To take into consideration the space-quantization effects in these simulators, a quantum correction is necessary. We propose to include an effective potential in the Monte Carlo device simulator to address the wave-like behavior of electrons in n-type silicon FinFET and n-type silicon nanowire transistors. The effective potential has a unique parameter, which can be adjusted to find a line density using an Effective Potential-Poisson solver that matches with the line density calculated using a Schrodinger-Poisson solver. We demonstrated that using the effective potential model, the effect of the electron confinement is well described.
AB - Particle-based Monte Carlo device simulators are an efficient tool to investigate the performance and reliability of transistors. The semiclassical theoretical model employed in the Monte Carlo device simulator is unsuccessful to describe some aspects of the multi-gate transistors that come from the quantum behavior of charge carriers. To take into consideration the space-quantization effects in these simulators, a quantum correction is necessary. We propose to include an effective potential in the Monte Carlo device simulator to address the wave-like behavior of electrons in n-type silicon FinFET and n-type silicon nanowire transistors. The effective potential has a unique parameter, which can be adjusted to find a line density using an Effective Potential-Poisson solver that matches with the line density calculated using a Schrodinger-Poisson solver. We demonstrated that using the effective potential model, the effect of the electron confinement is well described.
KW - FinFET
KW - effective potential
KW - nanowire transistors
KW - quantum confinement
UR - http://www.scopus.com/inward/record.url?scp=85139186418&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85139186418&partnerID=8YFLogxK
U2 - 10.1109/SBMICRO55822.2022.9881047
DO - 10.1109/SBMICRO55822.2022.9881047
M3 - Conference contribution
AN - SCOPUS:85139186418
T3 - 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
BT - 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th Symposium on Microelectronics Technology, SBMICRO 2022
Y2 - 22 August 2022 through 26 August 2022
ER -