Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently

The purpose of this work is to develop new approach to modeling p-channel devices using a 2D Monte Carlo transport kernel that is coupled self-consistently to a 2D Poisson equation solver and to a six-band k.p band-structure module. The need for full band solvers for hole transport is especially true in case of surface channel strained Si and buried channel strained SiGe p-MOSFETs investigated here. We have paid special attention on properly implementing and investigating the role of interface-roughness on the operation of these device structures.