Modeling of SiGe devices using a self-consistent full-band device simulator which properly takes into account quantum-mechanical size quantization and mobility enhancement

Dragica Vasileska, S. Krishnan, M. V. Fischetti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We examine performance enhancement off-channel SiGe devices using our recently developed particle-based device simulator that takes into account self-consistently the bandstructure and the quantum mechanical space-quantization and mobility enhancement (due to the smaller 2D density of states function) effects, We find surface roughness to be the dominant factor for the bad performance of p-channel SiGe devices when compared to conventional bulk p-MOSFETs at high bias conditions, At low and moderate bias conditions, when surface-roughness does not dominate the carrier transport, we observe performance enhancement in the operation of f-channel SiGe MOSFETs versus their conventional counter-parts. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationSiGe and Ge
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages55-66
Number of pages12
Edition7
ISBN (Electronic)1566775078
DOIs
StatePublished - 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

Publication series

NameECS Transactions
Number7
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period10/29/0611/3/06

ASJC Scopus subject areas

  • General Engineering

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