Modeling of electron diffusion length in GaInAsN solar cells

Sarah Kurtz, J. F. Geisz, D. J. Friedman, J. M. Olson, A. Duda, N. H. Karam, R. R. King, J. H. Ermer, D. E. Joslin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

38 Scopus citations


This paper seeks to quantify the electron diffusion length in p-type GaInAsN and to understand the performance of GaInAsN cells. The usual modeling is complicated because the electron diffusion length is quite short (often < 0.1 μm) and is usually less than the hole diffusion length. The properties (e.g. absorption and transport) of GaInAsN are both variable and poorly studied, and, because the band gap of GaInAsN is less than the band gap of the substrate, light that is transmitted through the GaInAsN layer may be reflected from the back metallization and make a second pass through the GaInAsN. Layers that are expected to be p-type can sometimes change to n-type, changing the location of the junction and complicating the modeling, but improving the performance of the cell. Internal quantum efficiencies as high as 80% near the GaAs band edge are reported.

Original languageEnglish (US)
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780357728
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering


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