Minority carrier lifetime and radiation damage coefficients of germanium

Hojun Yoon; Kenneth M. Edmondson; Geoffrey S. Kinsey; Richard King; Peter Hebert; Richard K. Ahrenkiel; B. T. Cavicchi; Nasser H. Karam

Minority carrier lifetime and radiation damage coefficients of germanium

Hojun Yoon, Kenneth M. Edmondson, Geoffrey S. Kinsey, Richard King, Peter Hebert, Richard K. Ahrenkiel, B. T. Cavicchi, Nasser H. Karam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Scopus citations

Abstract

We report on the measurement of minority carrier lifetime and on the radiation damage resistance of bulk Ge. Lifetime measurements are performed using the resonance-coupled photoconductive decay (RCPCD) method. Specifically, we examine the dependence of the lifetime as a function of the Ge resistivity and various 1 MeV electron radiation fluences. We measure hole lifetimes ranging from ∼0.9-34 μs for n-type Ge samples, corresponding to diffusion lengths of ∼30-400 μm. Electron lifetimes in p-type Ge range from ∼0.6-19 μs, corresponding to diffusion lengths of ∼30-420 μm. Lifetime measurements are also made after exposure to 1 MeV electron fluences ranging from 10¹³ to 10¹⁵ cm^-2 and these results are used to estimate the minority carrier lifetime and diffusion length damage coefficients K_τ and K_L.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	842-845
Number of pages	4
State	Published - 2005
Externally published	Yes
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: Jan 3 2005 → Jan 7 2005

Other

Other	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	1/3/05 → 1/7/05

ASJC Scopus subject areas

Condensed Matter Physics
Control and Systems Engineering

Cite this

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title = "Minority carrier lifetime and radiation damage coefficients of germanium",

abstract = "We report on the measurement of minority carrier lifetime and on the radiation damage resistance of bulk Ge. Lifetime measurements are performed using the resonance-coupled photoconductive decay (RCPCD) method. Specifically, we examine the dependence of the lifetime as a function of the Ge resistivity and various 1 MeV electron radiation fluences. We measure hole lifetimes ranging from ∼0.9-34 μs for n-type Ge samples, corresponding to diffusion lengths of ∼30-400 μm. Electron lifetimes in p-type Ge range from ∼0.6-19 μs, corresponding to diffusion lengths of ∼30-420 μm. Lifetime measurements are also made after exposure to 1 MeV electron fluences ranging from 1013 to 1015 cm-2 and these results are used to estimate the minority carrier lifetime and diffusion length damage coefficients Kτ and KL.",

author = "Hojun Yoon and Edmondson, {Kenneth M.} and Kinsey, {Geoffrey S.} and Richard King and Peter Hebert and Ahrenkiel, {Richard K.} and Cavicchi, {B. T.} and Karam, {Nasser H.}",

year = "2005",

language = "English (US)",

pages = "842--845",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

TY - GEN

T1 - Minority carrier lifetime and radiation damage coefficients of germanium

AU - Yoon, Hojun

AU - Edmondson, Kenneth M.

AU - Kinsey, Geoffrey S.

AU - King, Richard

AU - Hebert, Peter

AU - Ahrenkiel, Richard K.

AU - Cavicchi, B. T.

AU - Karam, Nasser H.

PY - 2005

Y1 - 2005

N2 - We report on the measurement of minority carrier lifetime and on the radiation damage resistance of bulk Ge. Lifetime measurements are performed using the resonance-coupled photoconductive decay (RCPCD) method. Specifically, we examine the dependence of the lifetime as a function of the Ge resistivity and various 1 MeV electron radiation fluences. We measure hole lifetimes ranging from ∼0.9-34 μs for n-type Ge samples, corresponding to diffusion lengths of ∼30-400 μm. Electron lifetimes in p-type Ge range from ∼0.6-19 μs, corresponding to diffusion lengths of ∼30-420 μm. Lifetime measurements are also made after exposure to 1 MeV electron fluences ranging from 1013 to 1015 cm-2 and these results are used to estimate the minority carrier lifetime and diffusion length damage coefficients Kτ and KL.

AB - We report on the measurement of minority carrier lifetime and on the radiation damage resistance of bulk Ge. Lifetime measurements are performed using the resonance-coupled photoconductive decay (RCPCD) method. Specifically, we examine the dependence of the lifetime as a function of the Ge resistivity and various 1 MeV electron radiation fluences. We measure hole lifetimes ranging from ∼0.9-34 μs for n-type Ge samples, corresponding to diffusion lengths of ∼30-400 μm. Electron lifetimes in p-type Ge range from ∼0.6-19 μs, corresponding to diffusion lengths of ∼30-420 μm. Lifetime measurements are also made after exposure to 1 MeV electron fluences ranging from 1013 to 1015 cm-2 and these results are used to estimate the minority carrier lifetime and diffusion length damage coefficients Kτ and KL.

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M3 - Conference contribution

AN - SCOPUS:27944481818

SP - 842

EP - 845

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Minority carrier lifetime and radiation damage coefficients of germanium

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ASJC Scopus subject areas

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