TY - JOUR
T1 - Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates
AU - Storm, D. F.
AU - Katzer, D. S.
AU - Roussos, J. A.
AU - Mittereder, J. A.
AU - Bass, R.
AU - Binari, S. C.
AU - Zhou, Lin
AU - Smith, David
AU - Hanser, D.
AU - Preble, E. A.
AU - Evans, K. R.
N1 - Funding Information:
The authors gratefully acknowledge the assistance of Neil Green for device processing, Bill Mitchel for high-temperature Hall measurements, and Bill Everson for COREMA measurements. The work at NRL was supported by the Office of Naval Research, and the work at ASU was supported by ONR Grant No. N-00014-04-1-0020. The GaN substrate work at Kyma Technologies was supported in part by the Missile Defense Agency under contract number N00164-04-C-6066. LZ and DJS acknowledge use of the facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
PY - 2007/7/15
Y1 - 2007/7/15
N2 - We report on the structural and electrical properties of AlGaN/GaN heterostructures grown by molecular beam epitaxy on low-dislocation-density, free standing GaN substrates grown by hydride vapor phase epitaxy. Structural characterization by atomic force microscopy, transmission electron microscopy, and X-ray diffractometry reveal a smooth surface morphology, coherent interfaces, an absence of dislocations generated in the epitaxial layers, and narrow X-ray peaks. Hall measurements indicate room temperature electron mobilities of 1750 cm2/V s at sheet densities of 1.1×1013 cm-2. High electron mobility transistors exhibit excellent electrical characteristics, including output power densities of 4.8 W/mm at 10 GHz, off-state breakdown voltages of up to 200 V, and extrinsic cut-off frequencies of 36 GHz on devices with 0.45-μm gate lengths.
AB - We report on the structural and electrical properties of AlGaN/GaN heterostructures grown by molecular beam epitaxy on low-dislocation-density, free standing GaN substrates grown by hydride vapor phase epitaxy. Structural characterization by atomic force microscopy, transmission electron microscopy, and X-ray diffractometry reveal a smooth surface morphology, coherent interfaces, an absence of dislocations generated in the epitaxial layers, and narrow X-ray peaks. Hall measurements indicate room temperature electron mobilities of 1750 cm2/V s at sheet densities of 1.1×1013 cm-2. High electron mobility transistors exhibit excellent electrical characteristics, including output power densities of 4.8 W/mm at 10 GHz, off-state breakdown voltages of up to 200 V, and extrinsic cut-off frequencies of 36 GHz on devices with 0.45-μm gate lengths.
KW - A3. Hydride vapor phase epitaxy
KW - A3. Molecular beam epitaxy
KW - B1. Nitrides
KW - B2. Semiconducting gallium compounds
KW - B3. High electron mobility transistors
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U2 - 10.1016/j.jcrysgro.2007.04.003
DO - 10.1016/j.jcrysgro.2007.04.003
M3 - Article
AN - SCOPUS:34347329140
SN - 0022-0248
VL - 305
SP - 340
EP - 345
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2 SPEC. ISS.
ER -