Microstructure of Implanted and Rapid Thermal Annealed Semi-Insulating Poiycrystalline Oxygen-Doped Silicon

The microstructure of 10 and 30 atom percent oxygen content semi-insulating poiycrystalline oxygen-doped silicon films after various sequences of rapid thermal processing and ion implantation are investigated. Grain size and morphology characterization utilizes cross-sectional transmission electron microscopy. Secondary ion mass spectroscopy analysis determines the dopant redistribution of implanted species; As⁺B⁺or P⁺before and after thermal treatment. The oxygen content dominates the grain size regardless of subsequent fabrication processing. The presence of the implanted and thermally activated dopants increases the conductivity dramatically, with no measurable influence on grain size. The presence of the implanted species does improve the conductivity with little alteration to the microstructure. A high temperature grain growth RTA prior to implantation and activation increases grain size; however, the overall oxygen content determines the grain size regardless of the fabrication processing.