Microstructure of GaN epitaxy on SiC using AlN buffer layers

F. A. Ponce, B. S. Krusor, J. S. Major, W. E. Plano, D. F. Welch

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206 Scopus citations


The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of ∼109cm -2.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
StatePublished - Dec 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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