Microstructural properties of InAs/InAsxSb1-x superlattices and InASxSb1-x ordered alloys grown by modulated molecular beam epitaxy

Yong-Hang Zhang; A. Lew; E. Yu; Y. Chen

doi:10.1016/S0022-0248(96)01201-8

Microstructural properties of InAs/InAs_xSb_1-x superlattices and InAS_xSb_1-x ordered alloys grown by modulated molecular beam epitaxy

Yong-Hang Zhang
, A. Lew
, E. Yu
, Y. Chen

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Modulated molecular beam epitaxy (MMBE) has been demonstrated to be useful in controlling group-V alloys such as InAs_xSb_1-x and AlAs_xSb_1-x. Further studies of the MMBE grown InAs_xSb_1-x ordered alloys and InAs/InAs_xSb_1-x superlattices by using cross-sectional scanning tunneling microscopy show well defined interfaces between InAs_xSb_1-x ordered alloys and InAs. Clear composition modulation is observed in the InAs_xSb_1-x ordered alloy layers. Transmission electron diffraction and microscopy, X-ray diffraction, and low temperature photoluminescence experiments show no obvious sign of CuPt orderings. These results suggest that MMBE provides a possible means to bypass the ordering problem of InAs_xSb_1-x random alloys.

Original language	English (US)
Pages (from-to)	833-837
Number of pages	5
Journal	Journal of Crystal Growth
Volume	175-176
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-0248(96)01201-8
State	Published - May 1997

Keywords

InAs
InAsSb
InSb
MBE
STM
TEM

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(96)01201-8

Cite this

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title = "Microstructural properties of InAs/InAsxSb1-x superlattices and InASxSb1-x ordered alloys grown by modulated molecular beam epitaxy",

abstract = "Modulated molecular beam epitaxy (MMBE) has been demonstrated to be useful in controlling group-V alloys such as InAsxSb1-x and AlAsxSb1-x. Further studies of the MMBE grown InAsxSb1-x ordered alloys and InAs/InAsxSb1-x superlattices by using cross-sectional scanning tunneling microscopy show well defined interfaces between InAsxSb1-x ordered alloys and InAs. Clear composition modulation is observed in the InAsxSb1-x ordered alloy layers. Transmission electron diffraction and microscopy, X-ray diffraction, and low temperature photoluminescence experiments show no obvious sign of CuPt orderings. These results suggest that MMBE provides a possible means to bypass the ordering problem of InAsxSb1-x random alloys.",

keywords = "InAs, InAsSb, InSb, MBE, STM, TEM",

author = "Yong-Hang Zhang and A. Lew and E. Yu and Y. Chen",

year = "1997",

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doi = "10.1016/S0022-0248(96)01201-8",

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journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Microstructural properties of InAs/InAsxSb1-x superlattices and InASxSb1-x ordered alloys grown by modulated molecular beam epitaxy

AU - Zhang, Yong-Hang

AU - Lew, A.

AU - Yu, E.

AU - Chen, Y.

PY - 1997/5

Y1 - 1997/5

N2 - Modulated molecular beam epitaxy (MMBE) has been demonstrated to be useful in controlling group-V alloys such as InAsxSb1-x and AlAsxSb1-x. Further studies of the MMBE grown InAsxSb1-x ordered alloys and InAs/InAsxSb1-x superlattices by using cross-sectional scanning tunneling microscopy show well defined interfaces between InAsxSb1-x ordered alloys and InAs. Clear composition modulation is observed in the InAsxSb1-x ordered alloy layers. Transmission electron diffraction and microscopy, X-ray diffraction, and low temperature photoluminescence experiments show no obvious sign of CuPt orderings. These results suggest that MMBE provides a possible means to bypass the ordering problem of InAsxSb1-x random alloys.

AB - Modulated molecular beam epitaxy (MMBE) has been demonstrated to be useful in controlling group-V alloys such as InAsxSb1-x and AlAsxSb1-x. Further studies of the MMBE grown InAsxSb1-x ordered alloys and InAs/InAsxSb1-x superlattices by using cross-sectional scanning tunneling microscopy show well defined interfaces between InAsxSb1-x ordered alloys and InAs. Clear composition modulation is observed in the InAsxSb1-x ordered alloy layers. Transmission electron diffraction and microscopy, X-ray diffraction, and low temperature photoluminescence experiments show no obvious sign of CuPt orderings. These results suggest that MMBE provides a possible means to bypass the ordering problem of InAsxSb1-x random alloys.

KW - InAs

KW - InAsSb

KW - InSb

KW - MBE

KW - STM

KW - TEM

UR - https://www.scopus.com/pages/publications/0031141845

UR - https://www.scopus.com/pages/publications/0031141845#tab=citedBy

U2 - 10.1016/S0022-0248(96)01201-8

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