Microstructural changes in oxygen implanted SOI material at intermediate annealing steps in thermal ramping

J. C. Park, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The authors report on the micostructural changes in HT (high-temperature-implanted) SIMOX (separation by implanted oxygen) at various stages in the ramping process by simulating the thermal treatment with two-hour anneals at intermediate temperatures. The wafers studied were implanted to 1.8 × 1018 cm-2 at 200 keV at a temperature of 620°C. To simulate the effect of the thermal ramping cycle, wafers were annealed for 2 hours at 50°C intervals from 800°C to 1100°C. Cross section samples were studies with conventional transmission electron microscopy (TEM) techniques at 200 keV. Major microstructural changes are shown to occur in SIMOX during the thermal ramping cycle between temperatures of 900°C and 1100°C. These changes strongly affect, possibly even control, the final defect density and buried oxide microstructure, even prior to the final high temperature anneal. Dislocation formation in SIMOX occurs during thermal ramping, probably between 1000°C and 1100°C. This suggests that it may be possible to further reduce dislocation densities of 106 cm-2, as found in HT SIMOX, by altering the thermal ramping cycle.

Original languageEnglish (US)
Title of host publication1991 IEEE International SOI Conference Proceedings
PublisherPubl by IEEE
Number of pages2
ISBN (Print)0780301846
StatePublished - Jan 1 1992
Event1991 IEEE International SOI Conference - Vail Valley, CO, USA
Duration: Oct 1 1991Oct 3 1991

Publication series

Name1991 IEEE International SOI Conference Proceedings


Other1991 IEEE International SOI Conference
CityVail Valley, CO, USA

ASJC Scopus subject areas

  • General Engineering


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