Microstructural and micromagnetic characterization of thin film magnetic tunnel junctions

R. E. Dunin-Borkowski; Martha McCartney; David Smith; S. Gider; B. U. Runge; S. S P Parkin

doi:10.1063/1.370491

Microstructural and micromagnetic characterization of thin film magnetic tunnel junctions

R. E. Dunin-Borkowski, Martha McCartney, David Smith, S. Gider, B. U. Runge, S. S P Parkin

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Combinations of high resolution electron microscopy, Lorentz microscopy, and off axis electron holography were used for the characterization of thin film magnetic tunnel junctions (MTJ). The MTJs contain CoPtCr hard ferromagnetic layers, alumina insulating barriers, and CoPt, Co, or NiFe soft ferromagnetic layers. The effect of annealing on the integrity of the alumina tunnel barrier were studied and the mechanism of magnetization decay of the hard layer following repeated reversal of the soft layers were addressed.

Original language	English (US)
Pages (from-to)	4815-4817
Number of pages	3
Journal	Unknown Journal
Volume	85
Issue number	8 II A
DOIs	https://doi.org/10.1063/1.370491
State	Published - Apr 15 1999
Event	Proceedings of the 43rd Annual Conference on Magnetism and Magnetic Materials - Miami, FL, USA Duration: Nov 9 1998 → Nov 12 1998

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General Physics and Astronomy

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10.1063/1.370491

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title = "Microstructural and micromagnetic characterization of thin film magnetic tunnel junctions",

abstract = "Combinations of high resolution electron microscopy, Lorentz microscopy, and off axis electron holography were used for the characterization of thin film magnetic tunnel junctions (MTJ). The MTJs contain CoPtCr hard ferromagnetic layers, alumina insulating barriers, and CoPt, Co, or NiFe soft ferromagnetic layers. The effect of annealing on the integrity of the alumina tunnel barrier were studied and the mechanism of magnetization decay of the hard layer following repeated reversal of the soft layers were addressed.",

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T1 - Microstructural and micromagnetic characterization of thin film magnetic tunnel junctions

AU - Dunin-Borkowski, R. E.

AU - McCartney, Martha

AU - Smith, David

AU - Gider, S.

AU - Runge, B. U.

AU - Parkin, S. S P

PY - 1999/4/15

Y1 - 1999/4/15

N2 - Combinations of high resolution electron microscopy, Lorentz microscopy, and off axis electron holography were used for the characterization of thin film magnetic tunnel junctions (MTJ). The MTJs contain CoPtCr hard ferromagnetic layers, alumina insulating barriers, and CoPt, Co, or NiFe soft ferromagnetic layers. The effect of annealing on the integrity of the alumina tunnel barrier were studied and the mechanism of magnetization decay of the hard layer following repeated reversal of the soft layers were addressed.

AB - Combinations of high resolution electron microscopy, Lorentz microscopy, and off axis electron holography were used for the characterization of thin film magnetic tunnel junctions (MTJ). The MTJs contain CoPtCr hard ferromagnetic layers, alumina insulating barriers, and CoPt, Co, or NiFe soft ferromagnetic layers. The effect of annealing on the integrity of the alumina tunnel barrier were studied and the mechanism of magnetization decay of the hard layer following repeated reversal of the soft layers were addressed.

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JF - Unknown Journal

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T2 - Proceedings of the 43rd Annual Conference on Magnetism and Magnetic Materials

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Microstructural and micromagnetic characterization of thin film magnetic tunnel junctions

Abstract

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