Microscopic transport model for impurity scattering in two-dimensional novel a-T3 materials

D. H. Huang, A. Iurov, H. Y. Xu, Y. C. Lai, G. Gumbs

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The valley-dependent skew scattering of conduction electrons by impurities in two-dimensional α-T3 materials is studied. The interplay of Lorentz and Berry forces, which act on mobile electrons in position and momentum spaces respectively, is quantified. Interactions of electrons with ionized impurities at two valleys are observed in different scattering directions. Both the zeroand first-order Boltzmann moment equations are used for calculating scattering-angle distributions of resulting skew currents, which are significantly enhanced by introducing microscopic inverse energy- and momentum-relaxation times to two moment equations.

Original languageEnglish (US)
Title of host publicationInfrared Sensors, Devices, and Applications IX
EditorsPaul D. LeVan, Priyalal Wijewarnasuriya, Ashok K. Sood
ISBN (Electronic)9781510629516
StatePublished - 2019
EventInfrared Sensors, Devices, and Applications IX 2019 - San Diego, United States
Duration: Aug 14 2019Aug 15 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceInfrared Sensors, Devices, and Applications IX 2019
Country/TerritoryUnited States
CitySan Diego


  • energy relexation
  • impurity scattering
  • momentum relaxation
  • valley
  • α-T lattices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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