Microscopic theory and simulation of quantum-well intersubband absorption: A three-subband model

Jianzhong Li; Cun-Zheng Ning

doi:10.1117/12.537775

Microscopic theory and simulation of quantum-well intersubband absorption: A three-subband model

Jianzhong Li
, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the nonparabolicity effect, we illuminate the underlying physics that shapes the spectra.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	M. Osinski, H. Amano, F. Henneberger
Pages	95-102
Number of pages	8
Volume	5349
DOIs	https://doi.org/10.1117/12.537775
State	Published - 2004
Externally published	Yes
Event	Physics and Simulation of Optoelectronic Devices XII - San Jose, CA, United States Duration: Jan 26 2004 → Jan 29 2004

Other

Other	Physics and Simulation of Optoelectronic Devices XII
Country/Territory	United States
City	San Jose, CA
Period	1/26/04 → 1/29/04

Keywords

InAs quantum well
Intersubband transition
Linear absorption
Semiconductor heterostructure

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.537775

Cite this

Li, J & Ning, C-Z 2004, Microscopic theory and simulation of quantum-well intersubband absorption: A three-subband model. in M Osinski, H Amano & F Henneberger (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5349, pp. 95-102, Physics and Simulation of Optoelectronic Devices XII, San Jose, CA, United States, 1/26/04. https://doi.org/10.1117/12.537775

@inproceedings{1a8eab5287aa428cb0d7ff8d60a36eea,

title = "Microscopic theory and simulation of quantum-well intersubband absorption: A three-subband model",

abstract = "We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the nonparabolicity effect, we illuminate the underlying physics that shapes the spectra.",

keywords = "InAs quantum well, Intersubband transition, Linear absorption, Semiconductor heterostructure",

author = "Jianzhong Li and Cun-Zheng Ning",

year = "2004",

doi = "10.1117/12.537775",

language = "English (US)",

volume = "5349",

pages = "95--102",

editor = "M. Osinski and H. Amano and F. Henneberger",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Physics and Simulation of Optoelectronic Devices XII ; Conference date: 26-01-2004 Through 29-01-2004",

}

TY - GEN

T1 - Microscopic theory and simulation of quantum-well intersubband absorption

T2 - Physics and Simulation of Optoelectronic Devices XII

AU - Li, Jianzhong

AU - Ning, Cun-Zheng

PY - 2004

Y1 - 2004

N2 - We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the nonparabolicity effect, we illuminate the underlying physics that shapes the spectra.

AB - We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the nonparabolicity effect, we illuminate the underlying physics that shapes the spectra.

KW - InAs quantum well

KW - Intersubband transition

KW - Linear absorption

KW - Semiconductor heterostructure

UR - https://www.scopus.com/pages/publications/3543051284

UR - https://www.scopus.com/pages/publications/3543051284#tab=citedBy

U2 - 10.1117/12.537775

DO - 10.1117/12.537775

M3 - Conference contribution

AN - SCOPUS:3543051284

VL - 5349

SP - 95

EP - 102

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Osinski, M.

A2 - Amano, H.

A2 - Henneberger, F.

Y2 - 26 January 2004 through 29 January 2004

ER -

Microscopic theory and simulation of quantum-well intersubband absorption: A three-subband model

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this