Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

M. Park; J. J. Cuomo; B. J. Rodriguez; W. C. Yang; R. J. Nemanich; O. Ambacher

doi:10.1063/1.1570507

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

M. Park
, J. J. Cuomo
, B. J. Rodriguez
, W. C. Yang
, R. J. Nemanich
, O. Ambacher

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.

Original language	English (US)
Pages (from-to)	9542-9547
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.1570507
State	Published - Jun 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1570507

Cite this

@article{2d26fc52772d4203a73777897572b60b,

title = "Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures",

abstract = "Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.",

author = "M. Park and Cuomo, \{J. J.\} and Rodriguez, \{B. J.\} and Yang, \{W. C.\} and Nemanich, \{R. J.\} and O. Ambacher",

year = "2003",

month = jun,

day = "15",

doi = "10.1063/1.1570507",

language = "English (US)",

volume = "93",

pages = "9542--9547",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

AU - Park, M.

AU - Cuomo, J. J.

AU - Rodriguez, B. J.

AU - Yang, W. C.

AU - Nemanich, R. J.

AU - Ambacher, O.

PY - 2003/6/15

Y1 - 2003/6/15

N2 - Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.

AB - Electronic properties of the inversion domains in GaN-based lateral polarity heterostructures were discussed. Micro-Raman spectroscopy was used and piezoelectric polarization of each domain was studied. Results showed that the electron concentration in the N-face domain is slightly higher than that of Ga-face domain.

UR - https://www.scopus.com/pages/publications/0038126928

UR - https://www.scopus.com/pages/publications/0038126928#tab=citedBy

U2 - 10.1063/1.1570507

DO - 10.1063/1.1570507

M3 - Article

AN - SCOPUS:0038126928

SN - 0021-8979

VL - 93

SP - 9542

EP - 9547

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

Abstract

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