METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES.

W. E. Spicer; S. Pan; D. Mo; N. Newman; P. Mahowald; T. Kendelewicz; S. Eglash

doi:10.1116/1.582898

METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES.

W. E. Spicer, S. Pan, D. Mo, N. Newman, P. Mahowald, T. Kendelewicz, S. Eglash

Research output: Contribution to journal › Conference article › peer-review

25 Scopus citations

Abstract

Parameters are identified which give different pinning positions on n- and p-type semiconductor materials. Experimentally, Cs is in disagreement with any metallic approximation at the interface. Results for thick noble metals (Au, Cu, and Ag) deposited on clean GaAs(110) formed by cleaving in UHV are reported. An atomic explanation is suggested and related to interfacial chemistry. Differences are found between the thin and thick pinning positions of Al on GaAs.

Original language	English (US)
Pages (from-to)	476-480
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	2
Issue number	3
DOIs	https://doi.org/10.1116/1.582898
State	Published - 1984
Externally published	Yes
Event	Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th - Pinehurst, NC, USA Duration: Jan 31 1984 → Feb 2 1984

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.582898

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abstract = "Parameters are identified which give different pinning positions on n- and p-type semiconductor materials. Experimentally, Cs is in disagreement with any metallic approximation at the interface. Results for thick noble metals (Au, Cu, and Ag) deposited on clean GaAs(110) formed by cleaving in UHV are reported. An atomic explanation is suggested and related to interfacial chemistry. Differences are found between the thin and thick pinning positions of Al on GaAs.",

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AU - Spicer, W. E.

AU - Pan, S.

AU - Mo, D.

AU - Newman, N.

AU - Mahowald, P.

AU - Kendelewicz, T.

AU - Eglash, S.

PY - 1984

Y1 - 1984

N2 - Parameters are identified which give different pinning positions on n- and p-type semiconductor materials. Experimentally, Cs is in disagreement with any metallic approximation at the interface. Results for thick noble metals (Au, Cu, and Ag) deposited on clean GaAs(110) formed by cleaving in UHV are reported. An atomic explanation is suggested and related to interfacial chemistry. Differences are found between the thin and thick pinning positions of Al on GaAs.

AB - Parameters are identified which give different pinning positions on n- and p-type semiconductor materials. Experimentally, Cs is in disagreement with any metallic approximation at the interface. Results for thick noble metals (Au, Cu, and Ag) deposited on clean GaAs(110) formed by cleaving in UHV are reported. An atomic explanation is suggested and related to interfacial chemistry. Differences are found between the thin and thick pinning positions of Al on GaAs.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 11th

Y2 - 31 January 1984 through 2 February 1984

ER -

METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY BARRIER INTERFACES.

Abstract

ASJC Scopus subject areas

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