Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire

Qhalid Fareed, Vinod Adivarahan, Mikhail Gaevski, Thomas Katona, Jin Mei, Fernando Ponce, Asif Khan

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


We present a novel metalorganic hydride vapor phase epitaxy (MPHVPE) approach for lateral epitaxy of high-quality crack-free AlN layers over sapphire with thicknesses in excess of 20 μm. Feasibility of depositing thick AlN buffer layers and device quality AlxGa1-xN heterojunctions in a single chamber and growth run using metalorganic chemical vapor deposition and hydride vapor phase epitaxy growths either sequentially or simultaneously is demonstrated. Transmission electron microscopy, atomic force microscopy, and cathodoluminescence analyses confirm the viability of the MGHVPE grown layers for subsequent device fabrication.

Original languageEnglish (US)
Pages (from-to)L752-L754
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number29-32
StatePublished - Aug 10 2007


  • Aluminum nitride
  • Cathodoluminescence
  • Metalorganic hydride vapor phase epitaxy
  • Ultraviolet light emitting diode

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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