Memory Technologies: Status and Perspectives

Victor V. Zhirnov, Matthew J. Marinella

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

This chapter provides an outlook for the current baseline memory technologies based on storing electron charge, which include dynamic random access memory (DRAM), static random access memory (SRAM), and flash memory. The physics of all charge-based memory devices is analyzed using the barrier model, which allows derivation of the key performance parameters as well as scaling and performance projections. This chapter has a special emphasis on the energetics of charge-based memory, including cell, array, and system levels.

Original languageEnglish (US)
Title of host publicationEmerging Nanoelectronic Devices
PublisherWiley-Blackwell
Pages35-55
Number of pages21
Volume9781118447741
ISBN (Electronic)9781118958254
ISBN (Print)9781118447741
DOIs
StatePublished - Jan 27 2015
Externally publishedYes

Keywords

  • DRAM
  • Energy
  • Flash
  • Memory
  • Scaling limits
  • SRAM

ASJC Scopus subject areas

  • General Engineering

Fingerprint

Dive into the research topics of 'Memory Technologies: Status and Perspectives'. Together they form a unique fingerprint.

Cite this