Abstract
This chapter provides an outlook for the current baseline memory technologies based on storing electron charge, which include dynamic random access memory (DRAM), static random access memory (SRAM), and flash memory. The physics of all charge-based memory devices is analyzed using the barrier model, which allows derivation of the key performance parameters as well as scaling and performance projections. This chapter has a special emphasis on the energetics of charge-based memory, including cell, array, and system levels.
Original language | English (US) |
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Title of host publication | Emerging Nanoelectronic Devices |
Publisher | Wiley-Blackwell |
Pages | 35-55 |
Number of pages | 21 |
Volume | 9781118447741 |
ISBN (Electronic) | 9781118958254 |
ISBN (Print) | 9781118447741 |
DOIs | |
State | Published - Jan 27 2015 |
Externally published | Yes |
Keywords
- DRAM
- Energy
- Flash
- Memory
- Scaling limits
- SRAM
ASJC Scopus subject areas
- General Engineering