Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy

B. J. Rodriguez; D. J. Kim; A. I. Kingon; Robert Nemanich

Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy

B. J. Rodriguez, D. J. Kim, A. I. Kingon, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Piezoelectric properties of wurtzite AlN and GaN/AlN are investigated using scanning force microscopy (SFM). The magnitude of the effective longitudinal piezoelectric constant d ₃₃ of AlN and GaN/AlN thin films are measured and reported, and the d ₃₃ coefficients of these films were verified using an interferometric technique. Simultaneous imaging of the topography, and of the phase and magnitude of the piezoelectric strain is performed. Using a GaN film with patterned polarities, we demonstrate that polarity can be inferred from the phase image of the piezoelectric strain. We report d ₃₃=3±1 pm/V for AlN/SiC and 2±1 pm/V for GaN/AlN/SiC. Films grown by organo-metallic vapor phase epitaxy (OMVPE) on SiC, sputtered AlN films and films grown by molecular beam epitaxy (MBE) are characterized and compared.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	J.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Pages	571-576
Number of pages	6
Volume	693
State	Published - 2002
Externally published	Yes
Event	GaN and Related Alloys-2001 - Boston, MA, United States Duration: Nov 26 2001 → Nov 30 2001

Other

Other	GaN and Related Alloys-2001
Country/Territory	United States
City	Boston, MA
Period	11/26/01 → 11/30/01

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy. / Rodriguez, B. J.; Kim, D. J.; Kingon, A. I. et al.
Materials Research Society Symposium - Proceedings. ed. / J.E. Northrup; J. Neugebauer; D.C. Look; S.F. Chichibu; H. Riechert. Vol. 693 2002. p. 571-576.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rodriguez, BJ, Kim, DJ, Kingon, AI & Nemanich, R 2002, Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy. in JE Northrup, J Neugebauer, DC Look, SF Chichibu & H Riechert (eds), Materials Research Society Symposium - Proceedings. vol. 693, pp. 571-576, GaN and Related Alloys-2001, Boston, MA, United States, 11/26/01.

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title = "Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy",

abstract = "Piezoelectric properties of wurtzite AlN and GaN/AlN are investigated using scanning force microscopy (SFM). The magnitude of the effective longitudinal piezoelectric constant d 33 of AlN and GaN/AlN thin films are measured and reported, and the d 33 coefficients of these films were verified using an interferometric technique. Simultaneous imaging of the topography, and of the phase and magnitude of the piezoelectric strain is performed. Using a GaN film with patterned polarities, we demonstrate that polarity can be inferred from the phase image of the piezoelectric strain. We report d 33=3±1 pm/V for AlN/SiC and 2±1 pm/V for GaN/AlN/SiC. Films grown by organo-metallic vapor phase epitaxy (OMVPE) on SiC, sputtered AlN films and films grown by molecular beam epitaxy (MBE) are characterized and compared. ",

author = "Rodriguez, {B. J.} and Kim, {D. J.} and Kingon, {A. I.} and Robert Nemanich",

year = "2002",

language = "English (US)",

volume = "693",

pages = "571--576",

editor = "J.E. Northrup and J. Neugebauer and D.C. Look and S.F. Chichibu and H. Riechert",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "GaN and Related Alloys-2001 ; Conference date: 26-11-2001 Through 30-11-2001",

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T1 - Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy

AU - Rodriguez, B. J.

AU - Kim, D. J.

AU - Kingon, A. I.

AU - Nemanich, Robert

PY - 2002

Y1 - 2002

N2 - Piezoelectric properties of wurtzite AlN and GaN/AlN are investigated using scanning force microscopy (SFM). The magnitude of the effective longitudinal piezoelectric constant d 33 of AlN and GaN/AlN thin films are measured and reported, and the d 33 coefficients of these films were verified using an interferometric technique. Simultaneous imaging of the topography, and of the phase and magnitude of the piezoelectric strain is performed. Using a GaN film with patterned polarities, we demonstrate that polarity can be inferred from the phase image of the piezoelectric strain. We report d 33=3±1 pm/V for AlN/SiC and 2±1 pm/V for GaN/AlN/SiC. Films grown by organo-metallic vapor phase epitaxy (OMVPE) on SiC, sputtered AlN films and films grown by molecular beam epitaxy (MBE) are characterized and compared.

AB - Piezoelectric properties of wurtzite AlN and GaN/AlN are investigated using scanning force microscopy (SFM). The magnitude of the effective longitudinal piezoelectric constant d 33 of AlN and GaN/AlN thin films are measured and reported, and the d 33 coefficients of these films were verified using an interferometric technique. Simultaneous imaging of the topography, and of the phase and magnitude of the piezoelectric strain is performed. Using a GaN film with patterned polarities, we demonstrate that polarity can be inferred from the phase image of the piezoelectric strain. We report d 33=3±1 pm/V for AlN/SiC and 2±1 pm/V for GaN/AlN/SiC. Films grown by organo-metallic vapor phase epitaxy (OMVPE) on SiC, sputtered AlN films and films grown by molecular beam epitaxy (MBE) are characterized and compared.

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M3 - Conference contribution

AN - SCOPUS:0036373999

VL - 693

SP - 571

EP - 576

BT - Materials Research Society Symposium - Proceedings

A2 - Northrup, J.E.

A2 - Neugebauer, J.

A2 - Look, D.C.

A2 - Chichibu, S.F.

A2 - Riechert, H.

T2 - GaN and Related Alloys-2001

Y2 - 26 November 2001 through 30 November 2001

ER -

Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy

Abstract

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ASJC Scopus subject areas

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