Measurement of polarization-induced electric fields in GaN/AlInN quantum wells

Lin Zhou, Marcus Gonschorek, Etienne Giraud, E. Feltin, J. F. Carlin, Nicolas Grandjean, David Smith, Martha McCartney

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al2O 3 (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profiles across the heterostructure have been measured using off-axis electron holography. A polarization-induced electric field with magnitude of ∼2.2 ± 0.1 MV/cm was measured across the GaN quantum wells, in reasonable agreement with simulated values. However, the measured fields across the AlInN barriers were considerably less than predicted from simulations: possible reasons are briefly discussed.

Original languageEnglish (US)
Article number251902
JournalApplied Physics Letters
Issue number25
StatePublished - Dec 17 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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