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Keyphrases
MBE Growth
100%
GaSb
100%
NBn Photodetector
100%
GaAs Substrate
100%
Large Diameter
100%
Surface Morphology
75%
Commercial Production
50%
GaSb-based
50%
Metamorphic Buffer
50%
Semiconductor Manufacturing
25%
Increased Demand
25%
Research Laboratories
25%
Morphological Properties
25%
Heterostructure
25%
Molecular Beam Epitaxy
25%
Dislocation Density
25%
Production Environment
25%
GaAsSb
25%
Dark Current
25%
Lattice Constant
25%
Bandgap Engineering
25%
Ternary Alloys
25%
Epilayer
25%
Cutoff Wavelength
25%
Mid-wave
25%
High Resolution XRD
25%
Buffer Architecture
25%
Infrared Applications
25%
Roughness Value
25%
AlAsSb
25%
Focal Plane Array Detector
25%
Larger Diameter Substrate
25%
InAlSb
25%
Manufacturing Applications
25%
Laboratory Settings
25%
Application Space
25%
Surface Crystal
25%
Superlattices
25%
Crystal Properties
25%
Root Mean Square Roughness
25%
Long-wave Infrared Photodetectors
25%
Physics
Photometer
100%
X Ray Diffraction
100%
Nucleation
100%
Molecular Beam Epitaxy
100%
High Resolution
50%
Focal Plane Device
50%
Superlattice
50%
Energy Gaps (Solid State)
50%
Ternary Alloy
50%
Dark Current
50%
Detectors
50%
Crystal Property
50%
Infrared Photodetector
50%
Engineering
Gaas Substrate
100%
Photometer
100%
Surface Morphology
75%
X Ray Diffraction
50%
Engineering
25%
Increasing Demand
25%
Focal Plane
25%
Buffer Layer
25%
Space Application
25%
Research Laboratories
25%
High Resolution
25%
Cross Section
25%
Heterostructures
25%
Detector Array
25%
Dislocation Density
25%
Production Environment
25%
Ternary Alloy
25%
Cutoff Wavelength
25%
Root Mean Square
25%
Square Roughness
25%
Lattice Constant
25%
Band Gap
25%
Superlattice
25%
Material Science
Molecular Beam Epitaxy
100%
Gallium Arsenide
100%
Photosensor
100%
Surface Morphology
75%
Nucleation
50%
X-Ray Diffraction
50%
Heterojunction
25%
Density
25%
Buffer Layer
25%
Superlattice
25%
Lattice Constant
25%
Ternary Alloy
25%
Epilayers
25%