MBE growth and characterization of InAs quantum dots on strained GaAs 1-xSbx buffer layer for application in high efficiency solar cells

K. Y. Ban; G. M. Liu; S. P. Bremner; R. Opila; C. B. Honsberg

doi:10.1109/PVSC.2008.4922779

MBE growth and characterization of InAs quantum dots on strained GaAs _1-xSb_x buffer layer for application in high efficiency solar cells

K. Y. Ban, G. M. Liu, S. P. Bremner, R. Opila, C. B. Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated InAs quantum dots (QDs) on strained GaAsSb barrier layer in different Sb compositions. Use of Sb incorporated barrier layer for QD growth gives better quantum dot properties such as density, lateral size and uniformity. Growing GaAs_0.89Sb_0.11 results in a doubling of QD density and a 50% decrease in size of the QDs compared to growth on GaAs. Also, size distribution of QDs became narrower after incorporating Sb. These are described based on atomic force microscope (AFM) and its analysis data. X-ray Diffraction (XRD) shows Sb composition as a function of Sb/As flux ratio. On the basis of Reflective High Energy Electron Diffraction (RHEED) oscillation surface morphology of GaAs_1-xSb_x is described as well.

Original language	English (US)
Title of host publication	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs	https://doi.org/10.1109/PVSC.2008.4922779
State	Published - Dec 1 2008
Externally published	Yes
Event	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: May 11 2008 → May 16 2008

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country/Territory	United States
City	San Diego, CA
Period	5/11/08 → 5/16/08

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2008.4922779

Cite this

Ban, K. Y., Liu, G. M., Bremner, S. P., Opila, R., & Honsberg, C. B. (2008). MBE growth and characterization of InAs quantum dots on strained GaAs _1-xSb_x buffer layer for application in high efficiency solar cells. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 Article 4922779 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922779

MBE growth and characterization of InAs quantum dots on strained GaAs _1-xSb_x buffer layer for application in high efficiency solar cells. / Ban, K. Y.; Liu, G. M.; Bremner, S. P. et al.
33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922779 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ban, KY, Liu, GM, Bremner, SP, Opila, R & Honsberg, CB 2008, MBE growth and characterization of InAs quantum dots on strained GaAs _1-xSb_x buffer layer for application in high efficiency solar cells. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922779, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922779

@inproceedings{63dc61605bf5467185d89518c4b89d30,

title = "MBE growth and characterization of InAs quantum dots on strained GaAs 1-xSbx buffer layer for application in high efficiency solar cells",

abstract = "We have investigated InAs quantum dots (QDs) on strained GaAsSb barrier layer in different Sb compositions. Use of Sb incorporated barrier layer for QD growth gives better quantum dot properties such as density, lateral size and uniformity. Growing GaAs0.89Sb0.11 results in a doubling of QD density and a 50% decrease in size of the QDs compared to growth on GaAs. Also, size distribution of QDs became narrower after incorporating Sb. These are described based on atomic force microscope (AFM) and its analysis data. X-ray Diffraction (XRD) shows Sb composition as a function of Sb/As flux ratio. On the basis of Reflective High Energy Electron Diffraction (RHEED) oscillation surface morphology of GaAs1-xSbx is described as well.",

author = "Ban, {K. Y.} and Liu, {G. M.} and Bremner, {S. P.} and R. Opila and Honsberg, {C. B.}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/PVSC.2008.4922779",

language = "English (US)",

isbn = "9781424416417",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

booktitle = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008",

note = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 ; Conference date: 11-05-2008 Through 16-05-2008",

}

TY - GEN

T1 - MBE growth and characterization of InAs quantum dots on strained GaAs 1-xSbx buffer layer for application in high efficiency solar cells

AU - Ban, K. Y.

AU - Liu, G. M.

AU - Bremner, S. P.

AU - Opila, R.

AU - Honsberg, C. B.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We have investigated InAs quantum dots (QDs) on strained GaAsSb barrier layer in different Sb compositions. Use of Sb incorporated barrier layer for QD growth gives better quantum dot properties such as density, lateral size and uniformity. Growing GaAs0.89Sb0.11 results in a doubling of QD density and a 50% decrease in size of the QDs compared to growth on GaAs. Also, size distribution of QDs became narrower after incorporating Sb. These are described based on atomic force microscope (AFM) and its analysis data. X-ray Diffraction (XRD) shows Sb composition as a function of Sb/As flux ratio. On the basis of Reflective High Energy Electron Diffraction (RHEED) oscillation surface morphology of GaAs1-xSbx is described as well.

AB - We have investigated InAs quantum dots (QDs) on strained GaAsSb barrier layer in different Sb compositions. Use of Sb incorporated barrier layer for QD growth gives better quantum dot properties such as density, lateral size and uniformity. Growing GaAs0.89Sb0.11 results in a doubling of QD density and a 50% decrease in size of the QDs compared to growth on GaAs. Also, size distribution of QDs became narrower after incorporating Sb. These are described based on atomic force microscope (AFM) and its analysis data. X-ray Diffraction (XRD) shows Sb composition as a function of Sb/As flux ratio. On the basis of Reflective High Energy Electron Diffraction (RHEED) oscillation surface morphology of GaAs1-xSbx is described as well.

UR - http://www.scopus.com/inward/record.url?scp=84879720370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879720370&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2008.4922779

DO - 10.1109/PVSC.2008.4922779

M3 - Conference contribution

AN - SCOPUS:84879720370

SN - 9781424416417

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

Y2 - 11 May 2008 through 16 May 2008

ER -