Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography

J. Cai; Fernando Ponce; S. Tanaka; H. Omiya; Y. Nakagawa

doi:10.1002/1521-396X(200112)188:2<833::AID-PSSA833>3.0.CO;2-B

Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography

J. Cai, Fernando Ponce, S. Tanaka, H. Omiya, Y. Nakagawa

Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Electron holography has been, used to analyse the potential profile across GaN/Al_xGa_1-xN heterostructures. A potential difference of (0.21 ± 0.1) and (0.38 ± 0.12) eV is experimentally observed at the GaN/Al_0.19Ga_0.81N and GaN/Al_0.37Ga_0.63N interfaces, respectively. The potential energy profiles show the presence of a positive sheet charge and a two-dimensional electron gas with a density of 10¹² cm^-2. These measurements are smaller than measurements by other techniques. An analysis of the technique and of observed discrepancies is presented.

Original language	English (US)
Pages (from-to)	833-837
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200112)188:2<833::AID-PSSA833>3.0.CO;2-B
State	Published - Nov 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200112)188:2<833::AID-PSSA833>3.0.CO;2-B

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title = "Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography",

abstract = "Electron holography has been, used to analyse the potential profile across GaN/AlxGa1-xN heterostructures. A potential difference of (0.21 ± 0.1) and (0.38 ± 0.12) eV is experimentally observed at the GaN/Al0.19Ga0.81N and GaN/Al0.37Ga0.63N interfaces, respectively. The potential energy profiles show the presence of a positive sheet charge and a two-dimensional electron gas with a density of 1012 cm-2. These measurements are smaller than measurements by other techniques. An analysis of the technique and of observed discrepancies is presented.",

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T1 - Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography

AU - Cai, J.

AU - Ponce, Fernando

AU - Tanaka, S.

AU - Omiya, H.

AU - Nakagawa, Y.

PY - 2001/11

Y1 - 2001/11

N2 - Electron holography has been, used to analyse the potential profile across GaN/AlxGa1-xN heterostructures. A potential difference of (0.21 ± 0.1) and (0.38 ± 0.12) eV is experimentally observed at the GaN/Al0.19Ga0.81N and GaN/Al0.37Ga0.63N interfaces, respectively. The potential energy profiles show the presence of a positive sheet charge and a two-dimensional electron gas with a density of 1012 cm-2. These measurements are smaller than measurements by other techniques. An analysis of the technique and of observed discrepancies is presented.

AB - Electron holography has been, used to analyse the potential profile across GaN/AlxGa1-xN heterostructures. A potential difference of (0.21 ± 0.1) and (0.38 ± 0.12) eV is experimentally observed at the GaN/Al0.19Ga0.81N and GaN/Al0.37Ga0.63N interfaces, respectively. The potential energy profiles show the presence of a positive sheet charge and a two-dimensional electron gas with a density of 1012 cm-2. These measurements are smaller than measurements by other techniques. An analysis of the technique and of observed discrepancies is presented.

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Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography

Abstract

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