Mapping in concentration, strain, and internal electric field in InGaN/GaN quantum well structure

M. Takeguchi; Martha McCartney; David Smith

doi:10.1063/1.1689400

Mapping in concentration, strain, and internal electric field in InGaN/GaN quantum well structure

M. Takeguchi, Martha McCartney, David Smith

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Abstract

The concentration of indium, strain, and internal electric field present in InGaN/GaN quantum well were investigated. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution. The internal electric fields were determined by differentiating phase images obtained by electron holography. Results show that local fluctuations of In concentration caused inhomogeneities in the internal electric fields.

Original language	English (US)
Pages (from-to)	2103-2105
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	12
DOIs	https://doi.org/10.1063/1.1689400
State	Published - Mar 22 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1689400

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@article{013676a3416e47ecb45216bac3398169,

title = "Mapping in concentration, strain, and internal electric field in InGaN/GaN quantum well structure",

abstract = "The concentration of indium, strain, and internal electric field present in InGaN/GaN quantum well were investigated. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution. The internal electric fields were determined by differentiating phase images obtained by electron holography. Results show that local fluctuations of In concentration caused inhomogeneities in the internal electric fields.",

author = "M. Takeguchi and Martha McCartney and David Smith",

year = "2004",

month = mar,

day = "22",

doi = "10.1063/1.1689400",

language = "English (US)",

volume = "84",

pages = "2103--2105",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

number = "12",

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T1 - Mapping in concentration, strain, and internal electric field in InGaN/GaN quantum well structure

AU - Takeguchi, M.

AU - McCartney, Martha

AU - Smith, David

PY - 2004/3/22

Y1 - 2004/3/22

N2 - The concentration of indium, strain, and internal electric field present in InGaN/GaN quantum well were investigated. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution. The internal electric fields were determined by differentiating phase images obtained by electron holography. Results show that local fluctuations of In concentration caused inhomogeneities in the internal electric fields.

AB - The concentration of indium, strain, and internal electric field present in InGaN/GaN quantum well were investigated. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution. The internal electric fields were determined by differentiating phase images obtained by electron holography. Results show that local fluctuations of In concentration caused inhomogeneities in the internal electric fields.

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U2 - 10.1063/1.1689400

DO - 10.1063/1.1689400

M3 - Article

AN - SCOPUS:1942444667

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EP - 2105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Mapping in concentration, strain, and internal electric field in InGaN/GaN quantum well structure

Abstract

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