Magneto-conductance fluctuations in a V-grooved GaAs quantum-wire

T. Sugaya, C. K. Hahn, M. Ogura, A. Sato, J. P. Bird, D. K. Ferry

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


We study the magneto-resistance of a V-grooved GaAs quantum-wire field-effect transistor (QWR-FET) realized by selective growth of metalorganic vapor phase epitaxy. At low temperatures, the magneto-resistance of the wire shows reproducible fluctuations resulting from the quantum interference of electrons in the wire. The gate-voltage and temperature dependence of the conductance fluctuations are studied, and the latter reveal evidence for the robust phase coherence of electrons in the V-grooved QWR.

Original languageEnglish (US)
Pages (from-to)102-106
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-2
StatePublished - Jul 2003
EventFourth International Symposium on Nanostructures and Mesoscopi - Tempe, AZ, United States
Duration: Feb 17 2003Feb 21 2003


  • Conductance fluctuations
  • Low-dimensional structures
  • Magneto-resistance
  • Metalorganic vapor phase epitaxy
  • Nanostructures
  • Selective epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


Dive into the research topics of 'Magneto-conductance fluctuations in a V-grooved GaAs quantum-wire'. Together they form a unique fingerprint.

Cite this