Low-temperature growth of SiCalN films of high hardness on Si(111) substrates

Radek Roucka; John Tolle; David Smith; Peter Crozier; I. S T Tsong; John Kouvetakis

doi:10.1063/1.1413723

Low-temperature growth of SiCalN films of high hardness on Si(111) substrates

Radek Roucka, John Tolle, David Smith, Peter Crozier, I. S T Tsong, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 °C, considerably below the miscibility gap of SiC and AlN phases at 1900 °C. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H₃SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire.

Original language	English (US)
Pages (from-to)	2880-2882
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	18
DOIs	https://doi.org/10.1063/1.1413723
State	Published - Oct 29 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Low-temperature growth of SiCalN films of high hardness on Si(111) substrates",

abstract = "Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 °C, considerably below the miscibility gap of SiC and AlN phases at 1900 °C. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire.",

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T1 - Low-temperature growth of SiCalN films of high hardness on Si(111) substrates

AU - Roucka, Radek

AU - Tolle, John

AU - Smith, David

AU - Crozier, Peter

AU - Tsong, I. S T

AU - Kouvetakis, John

PY - 2001/10/29

Y1 - 2001/10/29

N2 - Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 °C, considerably below the miscibility gap of SiC and AlN phases at 1900 °C. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire.

AB - Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 °C, considerably below the miscibility gap of SiC and AlN phases at 1900 °C. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the columnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire.

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Low-temperature growth of SiCalN films of high hardness on Si(111) substrates

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