Low-Temperature Epitaxial Growth of the Quaternary Wide Band Gap Semiconductor SiCAlN

R. Roucka, J. Tolle, Andrew Chizmeshya, Peter Crozier, C. D. Poweleit, David Smith, I. S.T. Tsong, John Kouvetakis

Research output: Contribution to journalArticlepeer-review


Two compounds SiC and AlN, normally insoluble in each other below [Formula presented], are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 °C. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

Original languageEnglish (US)
Number of pages1
JournalPhysical Review Letters
Issue number20
StatePublished - Jan 1 2002

ASJC Scopus subject areas

  • General Physics and Astronomy


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