@inproceedings{767f59f73cf74d3997d00beb1618b809,
title = "Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology",
abstract = "This paper addresses the design and measurement results of two high frequency signal sources implemented in SiGe HBT technology. The 367 GHz signal source achieves a phase noise of -110 dBc/Hz at 10 MHz offset from the carrier and provides better than -8 dBm of output power. The 154 GHz signal source achieves a phase noise of -87 dBc/Hz at 1 MHz offset from the carrier and generates +7 dBm of differential output power. To the author's knowledge, the 154 GHz oscillator achieves the highest output power among silicon-based signal sources in this frequency range, and the 367 GHz signal source achieves the best phase noise among silicon-based signal sources in this frequency range. These results show the feasibility of implementation of high-performance sub-millimeter-wave circuits in advanced SiGe technology platforms.",
keywords = "SiGe, oscillator, output power, phase noise, signal source, sub-millimeter-wave",
author = "Saeed Zeinolabedinzadeh and Peter Song and Mehmet Kaynak and Mahmoud Kamarei and Bernd Tillack and Cressler, {John D.}",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/MWSYM.2014.6848559",
language = "English (US)",
isbn = "9781479938698",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE MTT-S International Microwave Symposium, IMS 2014",
note = "2014 IEEE MTT-S International Microwave Symposium, IMS 2014 ; Conference date: 01-06-2014 Through 06-06-2014",
}