Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications

Hong Chen, Houqiang Fu, Xuanqi Huang, Xiaodong Zhang, Tsung Han Yang, Jossue A. Montes, Izak Baranowski, Yuji Zhao

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


We perform comprehensive studies on the fundamental loss mechanisms in III-nitride waveguides in the visible spectral region. Theoretical analysis shows that free carrier loss dominates for GaN under low photon power injection. When optical power increases, the two photon absorption loss becomes important and eventually dominates when photon energy above half-bandgap of GaN. When the dimensions of the waveguides reduce, the sidewall scattering loss will start to dominate. To verify the theoretical results, a high performance GaN-on-sapphire waveguide was fabricated and characterized. Experimental results are consistent with the theoretical findings, showing that under high power injection the optical loss changed significantly for GaN waveguides. A low optical loss ~2 dB/cm was achieved on the GaN waveguide, which is the lowest value ever reported for the visible spectral range. The results and fabrication processes developed in this work pave the way for the development of III-nitride integrated photonics in the visible and potentially ultraviolet spectral range for nonlinear optics and quantum photonics applications.

Original languageEnglish (US)
Pages (from-to)31758-31773
Number of pages16
JournalOptics Express
Issue number25
StatePublished - Dec 11 2017

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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