Long range order in ultra-thin SiO
            2 grown on ordered Si(100)

Q. B. Hurst; N. Herbots; J. M. Shaw; M. M. Floyd; David Smith; Robert Culbertson; M. P. Grams; J. D. Bradley; P. Zimmerman; V. Atluri

Long range order in ultra-thin SiO ₂ grown on ordered Si(100)

Q. B. Hurst, N. Herbots, J. M. Shaw, M. M. Floyd, David Smith, Robert Culbertson, M. P. Grams, J. D. Bradley, P. Zimmerman, V. Atluri

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we investigate the correlation of electrical properties and structure of 1-4 nm thick SiO ₂ grown on H-passivated Si(100) for ultra-thin gate applications. Ordered (1×1) Si(100) stable in ambient air is obtained at room temperature by wet chemical cleaning. Ion Beam Analysis using a combination of ion channeling and ¹⁶O(α,α) ¹⁶O nuclear resonance yields Si areal densities lower than that of a bulk-terminated Si crystal as calculated by Monte-Carlo simulations. This result indicates shadowing of Si substrate atoms by Si atoms in the thermally grown oxide. Detection of order by ion channeling is supported by Reflection High Energy Electron Diffraction (RHEED). C-V and I-V measurements are generally inconclusive for ultra-thin (1-2 nm) oxides because of leakage and breakdown. Surface charge analysis enables a comparison between ordered oxides and conventional oxides. The results are promising.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	181-187
Number of pages	7
Volume	567
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA Duration: Apr 5 1999 → Apr 8 1999

Other

Other	Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics
City	San Francisco, CA, USA
Period	4/5/99 → 4/8/99

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Hurst, QB, Herbots, N, Shaw, JM, Floyd, MM, Smith, D , Culbertson, R, Grams, MP, Bradley, JD, Zimmerman, P & Atluri, V 1999, Long range order in ultra-thin SiO ₂ grown on ordered Si(100) in Materials Research Society Symposium - Proceedings. vol. 567, Materials Research Society, pp. 181-187, Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics, San Francisco, CA, USA, 4/5/99.

@inproceedings{5ed4c6da52f54ec7b31914d8bcaf3bdb,

title = "Long range order in ultra-thin SiO 2 grown on ordered Si(100) ",

abstract = "In this paper, we investigate the correlation of electrical properties and structure of 1-4 nm thick SiO 2 grown on H-passivated Si(100) for ultra-thin gate applications. Ordered (1×1) Si(100) stable in ambient air is obtained at room temperature by wet chemical cleaning. Ion Beam Analysis using a combination of ion channeling and 16O(α,α) 16O nuclear resonance yields Si areal densities lower than that of a bulk-terminated Si crystal as calculated by Monte-Carlo simulations. This result indicates shadowing of Si substrate atoms by Si atoms in the thermally grown oxide. Detection of order by ion channeling is supported by Reflection High Energy Electron Diffraction (RHEED). C-V and I-V measurements are generally inconclusive for ultra-thin (1-2 nm) oxides because of leakage and breakdown. Surface charge analysis enables a comparison between ordered oxides and conventional oxides. The results are promising. ",

author = "Hurst, {Q. B.} and N. Herbots and Shaw, {J. M.} and Floyd, {M. M.} and David Smith and Robert Culbertson and Grams, {M. P.} and Bradley, {J. D.} and P. Zimmerman and V. Atluri",

year = "1999",

language = "English (US)",

volume = "567",

pages = "181--187",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics ; Conference date: 05-04-1999 Through 08-04-1999",

}

TY - GEN

T1 - Long range order in ultra-thin SiO 2 grown on ordered Si(100)

AU - Hurst, Q. B.

AU - Herbots, N.

AU - Shaw, J. M.

AU - Floyd, M. M.

AU - Smith, David

AU - Culbertson, Robert

AU - Grams, M. P.

AU - Bradley, J. D.

AU - Zimmerman, P.

AU - Atluri, V.

PY - 1999

Y1 - 1999

N2 - In this paper, we investigate the correlation of electrical properties and structure of 1-4 nm thick SiO 2 grown on H-passivated Si(100) for ultra-thin gate applications. Ordered (1×1) Si(100) stable in ambient air is obtained at room temperature by wet chemical cleaning. Ion Beam Analysis using a combination of ion channeling and 16O(α,α) 16O nuclear resonance yields Si areal densities lower than that of a bulk-terminated Si crystal as calculated by Monte-Carlo simulations. This result indicates shadowing of Si substrate atoms by Si atoms in the thermally grown oxide. Detection of order by ion channeling is supported by Reflection High Energy Electron Diffraction (RHEED). C-V and I-V measurements are generally inconclusive for ultra-thin (1-2 nm) oxides because of leakage and breakdown. Surface charge analysis enables a comparison between ordered oxides and conventional oxides. The results are promising.

AB - In this paper, we investigate the correlation of electrical properties and structure of 1-4 nm thick SiO 2 grown on H-passivated Si(100) for ultra-thin gate applications. Ordered (1×1) Si(100) stable in ambient air is obtained at room temperature by wet chemical cleaning. Ion Beam Analysis using a combination of ion channeling and 16O(α,α) 16O nuclear resonance yields Si areal densities lower than that of a bulk-terminated Si crystal as calculated by Monte-Carlo simulations. This result indicates shadowing of Si substrate atoms by Si atoms in the thermally grown oxide. Detection of order by ion channeling is supported by Reflection High Energy Electron Diffraction (RHEED). C-V and I-V measurements are generally inconclusive for ultra-thin (1-2 nm) oxides because of leakage and breakdown. Surface charge analysis enables a comparison between ordered oxides and conventional oxides. The results are promising.

UR - http://www.scopus.com/inward/record.url?scp=0033312523&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033312523&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033312523

VL - 567

SP - 181

EP - 187

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics

Y2 - 5 April 1999 through 8 April 1999

ER -

Long range order in ultra-thin SiO ₂ grown on ordered Si(100)

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this