Localization of shunts across the floating junction of DSBC solar cells by lock-in thermography

O. Breitenstein, M. Langenkamp, K. R. McIntosh, C. B. Honsberg, M. Rinio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations


The passivation that is provided by a floating junction (FJ) is degraded by any shunts that occur across the FJ. In Double-Sided Buried-Contact (DSBC) solar cells, shunts have been suspected to occur at various locations of the FJ: at pinholes in the insulating oxide, tunnel currents near the rear fingers, and at the cell edges. However, until recently there has not been a simple technique to precisely localize these shunts, since by definition, the FJ cannot be contacted. Infrared lock-in thermography, performed in the dark by applying a pulsed forward bias to the emitter, can localize FJ shunts with a spacial resolution down to 5 urn. The FJs are "remotely" forward biased via the emitter potential, and the heat dissipation at the shunts is imaged. This technique permits the investigation of any type of leakage phenomena in any type of solar cell within minutes of measuring time by a non-contacting measurement, including the bias dependent leakage current at the edge of the cells.

Original languageEnglish (US)
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780357728
StatePublished - Jan 1 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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