Laser light spot mapping of depletion in power semiconductor devices

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Using a light spot scanning technique surface depletion at semiconductor junctions may be mapped. Depletion widths measured in this way are in agreement with calculated values for simple geometries. The effects of positive and negative bevels in spreading surface depletion are in qualitative agreement with theoretical predictions. Glass passivation alters surface depletion in a manner strongly dependent on glass/silicon interface charge. A high negative charge induces a channel which may be pinched off at high light injection levels. In addition a separate mechanism appears to produce channeling at high reverse voltages in some glasses. The technique is also used to locate breakdown due to device geometry or resistivity striations.

Original languageEnglish (US)
Pages (from-to)311-320
Number of pages10
Journalphysica status solidi (a)
Issue number1
StatePublished - May 16 1979

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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