Large-signal circuit-based time domain analysis of high frequency devices including distributed effects

Muhammad Waliullah; Samir M. El-Ghazaly; Stephen Goodnick

Large-signal circuit-based time domain analysis of high frequency devices including distributed effects

Muhammad Waliullah, Samir M. El-Ghazaly, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A fully distributed equivalent circuit model for MESFET is presented in this paper. The distributed circuit model incorporates sufficient number of segments to account for accurately wave propagation effects along device width. For the first time, distributed model having several segments is analyzed in time domain, which has the capability to evaluate large signal behavior. For a given MESFET, passive equivalent circuit elements are extracted from full wave simulation of the passive part as coplanar-coupled transmission lines using finite difference time domain technique. Active equivalent circuit elements are obtained from full hydrodynamic simulation with Curtice large signal model. The two equivalent circuits are combined together to form the basic unit segment. Several high frequency and high power characteristics of transistors are investigated and compared with previously published results.

Original language	English (US)
Title of host publication	IEEE MTT-S International Microwave Symposium Digest
Pages	2145-2148
Number of pages	4
Volume	3
State	Published - 2002
Event	IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States Duration: Jun 2 2002 → Jun 7 2002

Other

Other	IEEE MTT-S International Microwave Symposium Digest
Country/Territory	United States
City	Seattle, WA
Period	6/2/02 → 6/7/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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title = "Large-signal circuit-based time domain analysis of high frequency devices including distributed effects",

abstract = "A fully distributed equivalent circuit model for MESFET is presented in this paper. The distributed circuit model incorporates sufficient number of segments to account for accurately wave propagation effects along device width. For the first time, distributed model having several segments is analyzed in time domain, which has the capability to evaluate large signal behavior. For a given MESFET, passive equivalent circuit elements are extracted from full wave simulation of the passive part as coplanar-coupled transmission lines using finite difference time domain technique. Active equivalent circuit elements are obtained from full hydrodynamic simulation with Curtice large signal model. The two equivalent circuits are combined together to form the basic unit segment. Several high frequency and high power characteristics of transistors are investigated and compared with previously published results.",

author = "Muhammad Waliullah and El-Ghazaly, {Samir M.} and Stephen Goodnick",

year = "2002",

language = "English (US)",

volume = "3",

pages = "2145--2148",

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AU - Waliullah, Muhammad

AU - El-Ghazaly, Samir M.

AU - Goodnick, Stephen

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N2 - A fully distributed equivalent circuit model for MESFET is presented in this paper. The distributed circuit model incorporates sufficient number of segments to account for accurately wave propagation effects along device width. For the first time, distributed model having several segments is analyzed in time domain, which has the capability to evaluate large signal behavior. For a given MESFET, passive equivalent circuit elements are extracted from full wave simulation of the passive part as coplanar-coupled transmission lines using finite difference time domain technique. Active equivalent circuit elements are obtained from full hydrodynamic simulation with Curtice large signal model. The two equivalent circuits are combined together to form the basic unit segment. Several high frequency and high power characteristics of transistors are investigated and compared with previously published results.

AB - A fully distributed equivalent circuit model for MESFET is presented in this paper. The distributed circuit model incorporates sufficient number of segments to account for accurately wave propagation effects along device width. For the first time, distributed model having several segments is analyzed in time domain, which has the capability to evaluate large signal behavior. For a given MESFET, passive equivalent circuit elements are extracted from full wave simulation of the passive part as coplanar-coupled transmission lines using finite difference time domain technique. Active equivalent circuit elements are obtained from full hydrodynamic simulation with Curtice large signal model. The two equivalent circuits are combined together to form the basic unit segment. Several high frequency and high power characteristics of transistors are investigated and compared with previously published results.

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M3 - Conference contribution

AN - SCOPUS:0036063982

VL - 3

SP - 2145

EP - 2148

BT - IEEE MTT-S International Microwave Symposium Digest

T2 - IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

Large-signal circuit-based time domain analysis of high frequency devices including distributed effects

Abstract

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ASJC Scopus subject areas

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