Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications

B. F. Cole; G. C. Liang; N. Newman; K. Char; G. Zaharchuk; J. S. Martens

doi:10.1063/1.108411

Large-area YBa₂Cu₃O_7-δ thin films on sapphire for microwave applications

B. F. Cole
, G. C. Liang
, N. Newman
, K. Char
, G. Zaharchuk
, J. S. Martens

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

We have deposited YBa₂Cu₃O_7-δ(YBCO) films with low microwave surface resistance (R_s) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO₂. R_s values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, R_s values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm² samples.

Original language	English (US)
Pages (from-to)	1727-1729
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	14
DOIs	https://doi.org/10.1063/1.108411
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Cite this

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title = "Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications",

abstract = "We have deposited YBa2Cu3O7-δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (10{\=1}0) sapphire, and R-plane (1{\=1}02) sapphire is buffered by CeO2. Rs values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1{\texttimes}1 cm2 samples.",

author = "Cole, \{B. F.\} and Liang, \{G. C.\} and N. Newman and K. Char and G. Zaharchuk and Martens, \{J. S.\}",

year = "1992",

doi = "10.1063/1.108411",

language = "English (US)",

volume = "61",

pages = "1727--1729",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Large-area YBa2Cu3O7-δ thin films on sapphire for microwave applications

AU - Cole, B. F.

AU - Liang, G. C.

AU - Newman, N.

AU - Char, K.

AU - Zaharchuk, G.

AU - Martens, J. S.

PY - 1992

Y1 - 1992

N2 - We have deposited YBa2Cu3O7-δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO2. Rs values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.

AB - We have deposited YBa2Cu3O7-δ(YBCO) films with low microwave surface resistance (Rs) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (101̄0) sapphire, and R-plane (11̄02) sapphire is buffered by CeO2. Rs values of 450-620 μΩ at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, Rs values at 77 K and 10 GHz were 950 μΩ for a 5-cm-diam wafer and 700 μΩ for 1×1 cm2 samples.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Large-area YBa₂Cu₃O_7-δ thin films on sapphire for microwave applications

Abstract

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