Kink mechanism for formation of the Si(111)-(2×1) reconstructed surface

John Spence

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


An atomic mechanism is proposed to account for the generation of the (2×1) reconstruction of the (111) surface of silicon on cleavage at low temperature. The -bonded chain model is assumed for the reconstruction. By reducing the dimensionality of the phase transformation, the proposed kink mechanism provides a low-energy pathway for the reconstruction. The energy gain due to surface reconstruction must be considered in theories of lattice trapping during fracture.

Original languageEnglish (US)
Pages (from-to)12672-12674
Number of pages3
JournalPhysical Review B
Issue number17
StatePublished - 1988

ASJC Scopus subject areas

  • Condensed Matter Physics


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