Kinetic control of Ge(Si)/Si(100) dome cluster composition

E. P. McDaniel; Qian Jiang; Peter Crozier; Jeffery Drucker; David Smith

doi:10.1063/1.2135870

Kinetic control of Ge(Si)/Si(100) dome cluster composition

E. P. McDaniel, Qian Jiang, Peter Crozier, Jeffery Drucker, David Smith

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The Ge content of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) rises with increasing deposition rate. The rising Ge content is manifested by a decrease in the volume at which clusters change shape from pyramids to domes and is quantitatively confirmed using nm spatial resolution electron-energy-loss spectroscopy in a scanning transmission electron microscope. The areal density of dome clusters is controlled by the ratio between the deposition and surface diffusion rates whereas their composition is controlled by the ratio between the deposition and Si interdiffusion rates.

Original language	English (US)
Article number	223101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	22
DOIs	https://doi.org/10.1063/1.2135870
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Kinetic control of Ge(Si)/Si(100) dome cluster composition",

abstract = "The Ge content of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) rises with increasing deposition rate. The rising Ge content is manifested by a decrease in the volume at which clusters change shape from pyramids to domes and is quantitatively confirmed using nm spatial resolution electron-energy-loss spectroscopy in a scanning transmission electron microscope. The areal density of dome clusters is controlled by the ratio between the deposition and surface diffusion rates whereas their composition is controlled by the ratio between the deposition and Si interdiffusion rates.",

author = "McDaniel, {E. P.} and Qian Jiang and Peter Crozier and Jeffery Drucker and David Smith",

note = "Funding Information: The authors gratefully acknowledge the use of facilities within the Center for Solid State Science at Arizona State University. This work was supported by the National Science Foundation under Grant No. DMR 0304743. ",

year = "2005",

doi = "10.1063/1.2135870",

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T1 - Kinetic control of Ge(Si)/Si(100) dome cluster composition

AU - McDaniel, E. P.

AU - Jiang, Qian

AU - Crozier, Peter

AU - Drucker, Jeffery

AU - Smith, David

N1 - Funding Information: The authors gratefully acknowledge the use of facilities within the Center for Solid State Science at Arizona State University. This work was supported by the National Science Foundation under Grant No. DMR 0304743.

PY - 2005

Y1 - 2005

N2 - The Ge content of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) rises with increasing deposition rate. The rising Ge content is manifested by a decrease in the volume at which clusters change shape from pyramids to domes and is quantitatively confirmed using nm spatial resolution electron-energy-loss spectroscopy in a scanning transmission electron microscope. The areal density of dome clusters is controlled by the ratio between the deposition and surface diffusion rates whereas their composition is controlled by the ratio between the deposition and Si interdiffusion rates.

AB - The Ge content of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) rises with increasing deposition rate. The rising Ge content is manifested by a decrease in the volume at which clusters change shape from pyramids to domes and is quantitatively confirmed using nm spatial resolution electron-energy-loss spectroscopy in a scanning transmission electron microscope. The areal density of dome clusters is controlled by the ratio between the deposition and surface diffusion rates whereas their composition is controlled by the ratio between the deposition and Si interdiffusion rates.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

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ER -

Kinetic control of Ge(Si)/Si(100) dome cluster composition

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