Kinetic control of dome cluster composition by varying Ge deposition rate

E. P. McDaniel, Jeffery Drucker, Qian Jiang, P. A. Crazier, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The mean size of dome clusters grown by molecular beam epitaxy of pure Ge onto Si(100) at substrate temperatures, T, of 550°C und 650°C is deposition rate dependent. For samples with nominal Ge coverages near 8 ML (1 ML = 6.78 × 1014 atoms/cm2) and deposition rates between 1.4 and 17.5 ML/min, higher deposition rates decreased the mean dome diameter und increased the dome areal density. Additionally, the critical volume for the pyramid-to-dome transition decreases with increasing deposition rate for islands grown between T= 550°C and 650°C. By this measure, the Ge content of the dome clusters rises with increasing deposition rate. Quantitative, nm-resolved electron energy loss spectroscopy (EELS) measurements taken in a scanning transmission electron microscope confirm these results. For domes grown at T = 650°C with rates of 1.4 ML/min and 17.5 ML/min, EELS indicates 59% and 70% Ge compositions, respectively. These results show that dome cluster composition may be kinetically controlled by varying the Ge deposition rate.

Original languageEnglish (US)
Title of host publicationStability of Thin Films and Nanostructures
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558998063, 9781558998063
StatePublished - 2004
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 3 2004

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2004 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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