In this letter, we present our investigations on heating effects in Si on diamond and Si on AlN transistors, using a coupled Monte Carlo/ thermal moment expansion simulator. Both technologies are considered viable alternatives to silicon-on-insulator devices due to the fact that diamond and AlN have significantly higher thermal conductivities than SiO2. This fact is beneficial in the following two aspects, as demonstrated in this letter: 1) It leads to a significant reduction in the thermal degradation of the device electrical characteristics, and 2) it allows a more uniform distribution of temperature in the device active region, which, in turn, enhances heat removal.

Original languageEnglish (US)
Pages (from-to)621-624
Number of pages4
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 2008


  • Electrothermal effects
  • Modeling and simulation
  • Particle-based device simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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