Investigation on diffusion barrier properties of reactive sputter deposited TiAlxNyOz thin films for Cu metallization

H. C. Kim; Terry Alford

doi:10.1016/S0040-6090(03)01384-1

Investigation on diffusion barrier properties of reactive sputter deposited TiAl_xN_yO_z thin films for Cu metallization

H. C. Kim
, Terry Alford

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Barrier properties of TiAl_xN_yO_z films between electron-beam evaporated Cu thin films and thermally grown SiO ₂ substrates are investigated by Rutherford backscattering spectrometry, X-ray diffractometry (XRD), electrical resistivity measurement and adhesion tests. The Cu/TiAl_xN_yO_z/SiO ₂/Si samples are analyzed prior to and after vacuum anneals up to 800 °C for 1 h. Backscattering analysis indicates that the TiAl _xN_yO_z thin films are formed by reactive sputtering technique using the TiAl alloy target, nitrogen flow and high substrate temperature (400 °C). Furthermore, Cu diffusion through TiAl _xN_yO_z films does not occur even at high temperature (800 °C). XRD and electrical resistivity measurements show good thermal stability of Cu thin films annealed in vacuum at temperatures varying from 400 to 800 °C for 1 h. In addition, it is revealed by tape test that Cu thin films adhere to TiAl_xN_yO_z films very well. Results show that Cu thin film on TiAl_xN_yO _z can be used in the application of high temperature electronics due to its excellent high temperature properties.

Original language	English (US)
Pages (from-to)	6-11
Number of pages	6
Journal	Thin Solid Films
Volume	449
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)01384-1
State	Published - Feb 2 2004

Keywords

Cu metallization
Diffusion barrier
Reactive sputtering
TiAlNO thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(03)01384-1

Cite this

@article{959caf1f04b148df91b85b56d36a6e53,

title = "Investigation on diffusion barrier properties of reactive sputter deposited TiAlxNyOz thin films for Cu metallization",

abstract = "Barrier properties of TiAlxNyOz films between electron-beam evaporated Cu thin films and thermally grown SiO 2 substrates are investigated by Rutherford backscattering spectrometry, X-ray diffractometry (XRD), electrical resistivity measurement and adhesion tests. The Cu/TiAlxNyOz/SiO 2/Si samples are analyzed prior to and after vacuum anneals up to 800 °C for 1 h. Backscattering analysis indicates that the TiAl xNyOz thin films are formed by reactive sputtering technique using the TiAl alloy target, nitrogen flow and high substrate temperature (400 °C). Furthermore, Cu diffusion through TiAl xNyOz films does not occur even at high temperature (800 °C). XRD and electrical resistivity measurements show good thermal stability of Cu thin films annealed in vacuum at temperatures varying from 400 to 800 °C for 1 h. In addition, it is revealed by tape test that Cu thin films adhere to TiAlxNyOz films very well. Results show that Cu thin film on TiAlxNyO z can be used in the application of high temperature electronics due to its excellent high temperature properties.",

keywords = "Cu metallization, Diffusion barrier, Reactive sputtering, TiAlNO thin films",

author = "Kim, \{H. C.\} and Terry Alford",

note = "Funding Information: This work was carried out at the National Science Foundation's State/Industry/University Cooperative Research Centers{\textquoteright} (NSF-S/I/U CRC) Center for Low Power Electronics (CLPE). CLPE is supported by the NSF (Grant No. EEC-9523338), the State of Arizona, Burr-Brown, Inc., Conexant, Gain Technology, Intel Corporation, Medtronic Microelectronics Center, Microchip Technology, Motorola, Inc., The Motorola Foundation, Raytheon, Texas Instruments and Western Design Center. The authors would like to thank Professor James W. Mayer for useful discussions.",

year = "2004",

month = feb,

day = "2",

doi = "10.1016/S0040-6090(03)01384-1",

language = "English (US)",

volume = "449",

pages = "6--11",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - Investigation on diffusion barrier properties of reactive sputter deposited TiAlxNyOz thin films for Cu metallization

AU - Kim, H. C.

AU - Alford, Terry

N1 - Funding Information: This work was carried out at the National Science Foundation's State/Industry/University Cooperative Research Centers’ (NSF-S/I/U CRC) Center for Low Power Electronics (CLPE). CLPE is supported by the NSF (Grant No. EEC-9523338), the State of Arizona, Burr-Brown, Inc., Conexant, Gain Technology, Intel Corporation, Medtronic Microelectronics Center, Microchip Technology, Motorola, Inc., The Motorola Foundation, Raytheon, Texas Instruments and Western Design Center. The authors would like to thank Professor James W. Mayer for useful discussions.

PY - 2004/2/2

Y1 - 2004/2/2

N2 - Barrier properties of TiAlxNyOz films between electron-beam evaporated Cu thin films and thermally grown SiO 2 substrates are investigated by Rutherford backscattering spectrometry, X-ray diffractometry (XRD), electrical resistivity measurement and adhesion tests. The Cu/TiAlxNyOz/SiO 2/Si samples are analyzed prior to and after vacuum anneals up to 800 °C for 1 h. Backscattering analysis indicates that the TiAl xNyOz thin films are formed by reactive sputtering technique using the TiAl alloy target, nitrogen flow and high substrate temperature (400 °C). Furthermore, Cu diffusion through TiAl xNyOz films does not occur even at high temperature (800 °C). XRD and electrical resistivity measurements show good thermal stability of Cu thin films annealed in vacuum at temperatures varying from 400 to 800 °C for 1 h. In addition, it is revealed by tape test that Cu thin films adhere to TiAlxNyOz films very well. Results show that Cu thin film on TiAlxNyO z can be used in the application of high temperature electronics due to its excellent high temperature properties.

AB - Barrier properties of TiAlxNyOz films between electron-beam evaporated Cu thin films and thermally grown SiO 2 substrates are investigated by Rutherford backscattering spectrometry, X-ray diffractometry (XRD), electrical resistivity measurement and adhesion tests. The Cu/TiAlxNyOz/SiO 2/Si samples are analyzed prior to and after vacuum anneals up to 800 °C for 1 h. Backscattering analysis indicates that the TiAl xNyOz thin films are formed by reactive sputtering technique using the TiAl alloy target, nitrogen flow and high substrate temperature (400 °C). Furthermore, Cu diffusion through TiAl xNyOz films does not occur even at high temperature (800 °C). XRD and electrical resistivity measurements show good thermal stability of Cu thin films annealed in vacuum at temperatures varying from 400 to 800 °C for 1 h. In addition, it is revealed by tape test that Cu thin films adhere to TiAlxNyOz films very well. Results show that Cu thin film on TiAlxNyO z can be used in the application of high temperature electronics due to its excellent high temperature properties.

KW - Cu metallization

KW - Diffusion barrier

KW - Reactive sputtering

KW - TiAlNO thin films

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