Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters

Yuh Shiuan Liu; Tsung Ting Kao; Md Mahbub Satter; Zachary Lochner; Shyh Chiang Shen; Theeradetch Detchprohm; P. Douglas Yoder; Russell D. Dupuis; Jae Hyun Ryou; Alec M. Fischer; Yong O. Wei; Hongen Xie; Fernando Ponce

doi:10.1109/LPT.2015.2443053

Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters

Yuh Shiuan Liu, Tsung Ting Kao, Md Mahbub Satter, Zachary Lochner, Shyh Chiang Shen, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupuis, Jae Hyun Ryou, Alec M. Fischer, Yong O. Wei, Hongen Xie, Fernando Ponce

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10 Scopus citations

Abstract

We report a high-aluminum-containing ([Al] ∼0.6) AlGaN multiple-quantum well (MQW) double-heterojunction (DH) emitter employing an inverse-tapered-composition AlGaN:Mg p-type waveguide grown on a c plane Al-polar AlN bulk substrate. Using numerical simulations, we have determined that the inverse-tapered p-type waveguide design is necessary for high [Al] containing p-n junction devices as any valence band discontinuity at the junction will limit the vertical hole transport and induce a larger voltage-drop across the structure. The fabricated ultraviolet MQW DH emitter can sustain a DC current of at least 500 mA and a pulsed current of at least 1.07 A, which corresponds to a current density of 10 and 18 kA/cm ^{2} at maximum measured voltage of 15 and 20 V with the measured series resistance of 15 and 11 Ω , respectively.

Original language	English (US)
Article number	7120925
Pages (from-to)	1768-1771
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	27
Issue number	16
DOIs	https://doi.org/10.1109/LPT.2015.2443053
State	Published - Aug 15 2015

Keywords

AlGaN active layer
AlN substrate
deep ultraviolet laser diodes
epitaxial growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2015.2443053

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Liu, Y. S., Kao, T. T., Satter, M. M., Lochner, Z., Shen, S. C., Detchprohm, T., Yoder, P. D., Dupuis, R. D., Ryou, J. H., Fischer, A. M., Wei, Y. O., Xie, H., & Ponce, F. (2015). Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters. IEEE Photonics Technology Letters, 27(16), 1768-1771. Article 7120925. https://doi.org/10.1109/LPT.2015.2443053

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title = "Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters",

abstract = "We report a high-aluminum-containing ([Al] ∼0.6) AlGaN multiple-quantum well (MQW) double-heterojunction (DH) emitter employing an inverse-tapered-composition AlGaN:Mg p-type waveguide grown on a c plane Al-polar AlN bulk substrate. Using numerical simulations, we have determined that the inverse-tapered p-type waveguide design is necessary for high [Al] containing p-n junction devices as any valence band discontinuity at the junction will limit the vertical hole transport and induce a larger voltage-drop across the structure. The fabricated ultraviolet MQW DH emitter can sustain a DC current of at least 500 mA and a pulsed current of at least 1.07 A, which corresponds to a current density of 10 and 18 kA/cm ^{2} at maximum measured voltage of 15 and 20 V with the measured series resistance of 15 and 11 Ω , respectively.",

keywords = "AlGaN active layer, AlN substrate, deep ultraviolet laser diodes, epitaxial growth",

author = "Liu, {Yuh Shiuan} and Kao, {Tsung Ting} and Satter, {Md Mahbub} and Zachary Lochner and Shen, {Shyh Chiang} and Theeradetch Detchprohm and Yoder, {P. Douglas} and Dupuis, {Russell D.} and Ryou, {Jae Hyun} and Fischer, {Alec M.} and Wei, {Yong O.} and Hongen Xie and Fernando Ponce",

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doi = "10.1109/LPT.2015.2443053",

language = "English (US)",

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AU - Liu, Yuh Shiuan

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Lochner, Zachary

AU - Shen, Shyh Chiang

AU - Detchprohm, Theeradetch

AU - Yoder, P. Douglas

AU - Dupuis, Russell D.

AU - Ryou, Jae Hyun

AU - Fischer, Alec M.

AU - Wei, Yong O.

AU - Xie, Hongen

AU - Ponce, Fernando

PY - 2015/8/15

Y1 - 2015/8/15

N2 - We report a high-aluminum-containing ([Al] ∼0.6) AlGaN multiple-quantum well (MQW) double-heterojunction (DH) emitter employing an inverse-tapered-composition AlGaN:Mg p-type waveguide grown on a c plane Al-polar AlN bulk substrate. Using numerical simulations, we have determined that the inverse-tapered p-type waveguide design is necessary for high [Al] containing p-n junction devices as any valence band discontinuity at the junction will limit the vertical hole transport and induce a larger voltage-drop across the structure. The fabricated ultraviolet MQW DH emitter can sustain a DC current of at least 500 mA and a pulsed current of at least 1.07 A, which corresponds to a current density of 10 and 18 kA/cm ^{2} at maximum measured voltage of 15 and 20 V with the measured series resistance of 15 and 11 Ω , respectively.

AB - We report a high-aluminum-containing ([Al] ∼0.6) AlGaN multiple-quantum well (MQW) double-heterojunction (DH) emitter employing an inverse-tapered-composition AlGaN:Mg p-type waveguide grown on a c plane Al-polar AlN bulk substrate. Using numerical simulations, we have determined that the inverse-tapered p-type waveguide design is necessary for high [Al] containing p-n junction devices as any valence band discontinuity at the junction will limit the vertical hole transport and induce a larger voltage-drop across the structure. The fabricated ultraviolet MQW DH emitter can sustain a DC current of at least 500 mA and a pulsed current of at least 1.07 A, which corresponds to a current density of 10 and 18 kA/cm ^{2} at maximum measured voltage of 15 and 20 V with the measured series resistance of 15 and 11 Ω , respectively.

KW - AlGaN active layer

KW - AlN substrate

KW - deep ultraviolet laser diodes

KW - epitaxial growth

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Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters

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