Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters

Yuh Shiuan Liu, Tsung Ting Kao, Md Mahbub Satter, Zachary Lochner, Shyh Chiang Shen, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupuis, Jae Hyun Ryou, Alec M. Fischer, Yong O. Wei, Hongen Xie, Fernando Ponce

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We report a high-aluminum-containing ([Al] ∼0.6) AlGaN multiple-quantum well (MQW) double-heterojunction (DH) emitter employing an inverse-tapered-composition AlGaN:Mg p-type waveguide grown on a c plane Al-polar AlN bulk substrate. Using numerical simulations, we have determined that the inverse-tapered p-type waveguide design is necessary for high [Al] containing p-n junction devices as any valence band discontinuity at the junction will limit the vertical hole transport and induce a larger voltage-drop across the structure. The fabricated ultraviolet MQW DH emitter can sustain a DC current of at least 500 mA and a pulsed current of at least 1.07 A, which corresponds to a current density of 10 and 18 kA/cm ^{2} at maximum measured voltage of 15 and 20 V with the measured series resistance of 15 and 11 Ω , respectively.

Original languageEnglish (US)
Article number7120925
Pages (from-to)1768-1771
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number16
StatePublished - Aug 15 2015


  • AlGaN active layer
  • AlN substrate
  • deep ultraviolet laser diodes
  • epitaxial growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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