Intersubband transitions of optically excited excitons in quantum wells

Rosana Rodrigues; Ralph A. Höpfel; Y. Iimura; T. Yasui; Y. Segawa; Y. Aoyagi; S. M. Goodnick

doi:10.1117/12.162799

Intersubband transitions of optically excited excitons in quantum wells

Rosana Rodrigues
, Ralph A. Höpfel
, Y. Iimura
, T. Yasui
, Y. Segawa
, Y. Aoyagi
, S. M. Goodnick

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have experimentally studied the time-evolution of the exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130 ± 20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. The exciton lifetime in the second heavy-hole subband is considerably longer than reported values of the recombination time in the lowest exciton state at k = 0. The excitons in the higher subband at k = 0 can be excited selectively without exciting the lower subband at k > 0. From these findings we conclude that subband transitions of excitons in quantum wells represent a new appealing concept for optically pumped coherent sources in the meV range.

Original language	English (US)
Pages (from-to)	395-403
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1985
DOIs	https://doi.org/10.1117/12.162799
State	Published - 1993
Externally published	Yes
Event	Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: May 23 1993 → May 28 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.162799

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@article{5b7855a7131640f8b0a317fe27df51dd,

title = "Intersubband transitions of optically excited excitons in quantum wells",

abstract = "We have experimentally studied the time-evolution of the exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130 ± 20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. The exciton lifetime in the second heavy-hole subband is considerably longer than reported values of the recombination time in the lowest exciton state at k = 0. The excitons in the higher subband at k = 0 can be excited selectively without exciting the lower subband at k > 0. From these findings we conclude that subband transitions of excitons in quantum wells represent a new appealing concept for optically pumped coherent sources in the meV range.",

author = "Rosana Rodrigues and H{\"o}pfel, \{Ralph A.\} and Y. Iimura and T. Yasui and Y. Segawa and Y. Aoyagi and Goodnick, \{S. M.\}",

note = "Funding Information: Main part of the experimental work has been performed during a stay (R.A.H.) at Riken (Frontier Research Program), Wako-shi, Japan. R.R. thanks the Conselho Nacional de Desenvolvimento Qentifico e Tecnol6gico (CNPq), Brazil. The work has been supported by the Fonds zur Forderung der wissenschaftlichen Forschung, Austria (project \# 8704). Publisher Copyright: {\textcopyright} 1993 SPIE. All rights reserved.; Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 ; Conference date: 23-05-1993 Through 28-05-1993",

year = "1993",

doi = "10.1117/12.162799",

language = "English (US)",

volume = "1985",

pages = "395--403",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

}

TY - JOUR

T1 - Intersubband transitions of optically excited excitons in quantum wells

AU - Rodrigues, Rosana

AU - Höpfel, Ralph A.

AU - Iimura, Y.

AU - Yasui, T.

AU - Segawa, Y.

AU - Aoyagi, Y.

AU - Goodnick, S. M.

N1 - Funding Information: Main part of the experimental work has been performed during a stay (R.A.H.) at Riken (Frontier Research Program), Wako-shi, Japan. R.R. thanks the Conselho Nacional de Desenvolvimento Qentifico e Tecnol6gico (CNPq), Brazil. The work has been supported by the Fonds zur Forderung der wissenschaftlichen Forschung, Austria (project # 8704). Publisher Copyright: © 1993 SPIE. All rights reserved.

PY - 1993

Y1 - 1993

N2 - We have experimentally studied the time-evolution of the exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130 ± 20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. The exciton lifetime in the second heavy-hole subband is considerably longer than reported values of the recombination time in the lowest exciton state at k = 0. The excitons in the higher subband at k = 0 can be excited selectively without exciting the lower subband at k > 0. From these findings we conclude that subband transitions of excitons in quantum wells represent a new appealing concept for optically pumped coherent sources in the meV range.

AB - We have experimentally studied the time-evolution of the exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence as 130 ± 20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. The exciton lifetime in the second heavy-hole subband is considerably longer than reported values of the recombination time in the lowest exciton state at k = 0. The excitons in the higher subband at k = 0 can be excited selectively without exciting the lower subband at k > 0. From these findings we conclude that subband transitions of excitons in quantum wells represent a new appealing concept for optically pumped coherent sources in the meV range.

UR - https://www.scopus.com/pages/publications/85075864173

UR - https://www.scopus.com/pages/publications/85075864173#tab=citedBy

U2 - 10.1117/12.162799

DO - 10.1117/12.162799

M3 - Conference article

AN - SCOPUS:85075864173

SN - 0277-786X

VL - 1985

SP - 395

EP - 403

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993

Y2 - 23 May 1993 through 28 May 1993

ER -

Intersubband transitions of optically excited excitons in quantum wells

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